MSP430G2230QDEP Datasheet, PDF (27/36 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER

MSP430G2230-EP
www.ti.com
SLAS863 – AUGUST 2012
10-Bit ADC, Temperature Sensor and Built-In V_MID
over recommended ranges of supply voltage and up to operating free-air temperature, T_A = 105°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V_CC
MIN TYP MAX UNIT
I_SENSOR
Temperature sensor supply
current ⁽¹⁾
REFON = 0, INCHx = 0Ah,
T_A = 25°C
3V
TC_SENSOR
ADC10ON = 1, INCHx = 0Ah ⁽²⁾
3V
60
µA
3.55
mV/°C
t_{Sensor(sample)}
Sample time required if channel ADC10ON = 1, INCHx = 0Ah,
10 is selected ⁽³⁾
Error of conversion result ≤ 1 LSB
3V
30
µs
I_VMID
Current into divider at channel 11 ADC10ON = 1, INCHx = 0Bh
3V
(4) _µA
V_MID
V_CC divider at channel 11
ADC10ON = 1, INCHx = 0Bh,
V_MID ≉ 0.5 × V_CC
3V
1.5
V
t_VMID(sample)
Sample time required if channel ADC10ON = 1, INCHx = 0Bh,
11 is selected ⁽⁵⁾
Error of conversion result ≤ 1 LSB
3V
1220
ns
(1) The sensor current I_SENSOR is consumed if (ADC10ON = 1 and REFON = 1) or (ADC10ON = 1 and INCH = 0Ah and sample signal is
high). When REFON = 1, I_SENSOR is included in I_REF+. When REFON = 0, I_SENSOR applies during conversion of the temperature sensor
input (INCH = 0Ah).
(2) The following formula can be used to calculate the temperature sensor output voltage:
V_Sensor,typ = TC_Sensor (273 + T [°C] ) + V_{Offset,sensor} [mV] or
V_Sensor,typ = TC_Sensor T [°C] + V_Sensor(T_A = 0°C) [mV]
(3) The typical equivalent impedance of the sensor is 51 kΩ. The sample time required includes the sensor-on time t_SENSOR(on).
(4) No additional current is needed. The V_MID is used during sampling.
(5) The on-time t_VMID(on) is included in the sampling time t_VMID(sample); no additional on time is needed.
Flash Memory⁽¹⁾
over recommended ranges of supply voltage and up to operating free-air temperature, T_A = 105°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V_CC
MIN TYP MAX UNIT
V_{CC(PGM/ERASE)} Program and erase supply voltage
2.2
3.6 V
f_FTG
Flash timing generator frequency
257
476 kHz
I_PGM
Supply current from V_CC during program
3V
1
5 mA
I_ERASE
t_CPT
Supply current from V_CC during erase
Cumulative program time⁽²⁾
3V
2.2 V/3.6 V
1
7 mA
10 ms
t_CMErase
Cumulative mass erase time
Program/erase endurance
-40°C ≤ T_J ≤ 105°C
2.2 V/3.6 V
20
10⁴ 10⁵
ms
cycles
t_Retention
t_Word
t_{Block, 0}
Data retention duration
Word or byte program time
Block program time for first byte or word
T_J = 25°C
See ⁽³⁾
See ⁽³⁾
15
30
25
years
t_FTG
t_FTG
t_{Block, 1-63}
Block program time for each additional byte
or word
See ⁽³⁾
18
t_FTG
t_{Block, End}
t_{Mass Erase}
t_{Seg Erase}
Block program end-sequence wait time
Mass erase time
Segment erase time
See ⁽³⁾
See ⁽³⁾
See ⁽³⁾
6
t_FTG
10593
t_FTG
4819
t_FTG
(1) Additional flash retention documentation located in application report SLAA392.
(2) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(3) These values are hardwired into the Flash Controller's state machine (t_FTG = 1/f_FTG).
RAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
V_(RAMh)
PARAMETER
RAM retention supply voltage ⁽¹⁾
TEST CONDITIONS
CPU halted
MIN MAX UNIT
1.6
V
(1) This parameter defines the minimum supply voltage V_CC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
Copyright © 2012, Texas Instruments Incorporated
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