TMS28F002AXY Datasheet, PDF (22/79 Pages) Texas Instruments – 262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES

TMS28F002Axy, TMS28F200Axy
262144 BY 8-BIT/131072 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997
TMS28F002ASy and TMS28F200ASy
The TMS28F002ASy and the TMS28F200ASy configurations have the auto-select feature that allows
alternative read and program / erase voltages. Memory reads can be performed using V_CC = 3.3 V for optimum
power consumption or at V_CC = 5 V, for device performance. Erasing or programming the device can be
accomplished with 5-V V_PP, which eliminates having to use a 12-V source and / or in-system voltage converters.
Alternatively, 12-V V_PP operation exists for systems that already have a 12-V power supply, which provides
faster programming and erasing times. These configurations are offered in two different temperature ranges:
0°C to 70°C and – 40°C to 85°C.
recommended operating conditions for TMS28F002ASy and TMS28F200ASy
VCC Supply voltage
VPP Supply voltage
During write/read/erase/erase suspend
During read only ( VPPL )
During write/erase/erase suspend
VIH
High-level dc
input voltage
3.3-V VCC range
5-V VCC range
3.3-V VCC range
VIL
Low-level dc input
voltage
5-V VCC range
VLKO
VHH
VPPLK
VCC lock-out voltage from write/erase (see Note 7)
RP unlock voltage
VPP lock-out voltage from write/erase
TA
Operating free-air temperature during read/erase/program
NOTE 7: Minimum value at TA = 25°C.
3.3-V VCC range
5-V VCC range
VPPL
5-V VPP range
12-V VPP range
TTL
CMOS
TTL
CMOS
TTL
CMOS
TTL
CMOS
L suffix
E suffix
MIN
3
4.5
0
4.5
11.4
2
VCC – 0.2
2
VCC – 0.2
– 0.5
VSS – 0.2
– 0.3
VSS – 0.2
2
11.4
0
0
– 40
NOM MAX
3.3
3.6
5
5.5
6.5
5
5.5
12 12.6
VCC + 0.5
VCC + 0.2
VCC + 0.3
VCC + 0.2
0.8
VSS + 0.2
0.8
VSS + 0.2
12
13
1.5
70
85
UNIT
V
V
V
V
V
V
V
°C
°C
word/byte typical write and block-erase performance for TMS28F002ASy and TMS28F200ASy
(see Notes 8 and 9)
PARAMETER
5-V VPP RANGE
3.3-V VCC
RANGE
5-V VCC
RANGE
MIN TYP MAX MIN TYP MAX
Main block erase time
2.4
1.9
Main block byte-program time
1.7
1.4
Main block word-program time
1.1
0.9
Parameter/ boot-block erase time
0.84
0.8
NOTES: 8. Typical values shown are at TA = 25°C and nominal conditions
9. Excludes system-level overhead (all times in seconds)
12-V VPP RANGE
3.3-V VCC
RANGE
5-V VCC
RANGE
MIN TYP MAX MIN TYP MAX
1.3
1.1
14
1.6
1.2 4.2
0.8
0.6 2.1
0.44
0.34
7
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