1360854 Datasheet, PDF (213/581 Pages) Texas Instruments – Stellaris LM3S615 Microcontroller DATA SHEET

Stellaris® LM3S615 Microcontroller
6.3.2
6.3.2.1
6.3.2.2
#include "hw_types.h"
#include "hw_flash.h"
void
permanently_disable_jtag_swd(void)
{
//
// Clear the DBG field of the FMPRE register. Note that the value
// used in this instance does not affect the state of the BlockN
// bits, but were the value different, all bits in the FMPRE are
// affected by this function!
//
HWREG(FLASH_FMPRE) &= 0x3fffffff;
//
// The following sequence activates the one-time
// programming of the FMPRE register.
//
HWREG(FLASH_FMA) = 0x900;
HWREG(FLASH_FMC) = (FLASH_FMC_WRKEY | FLASH_FMC_COMT);
//
// Wait until the operation is complete.
//
while (HWREG(FLASH_FMC) & FLASH_FMC_COMT)
{
}
}
Flash Programming
The Stellaris devices provide a user-friendly interface for flash programming. All erase/program
operations are handled via three registers: FMA, FMD, and FMC.
During a Flash memory operation (write, page erase, or mass erase) access to the Flash memory
is inhibited. As a result, instruction and literal fetches are held off until the Flash memory operation
is complete. If instruction execution is required during a Flash memory operation, the code that is
executing must be placed in SRAM and executed from there while the flash operation is in progress.
To program a 32-bit word
1. Write source data to the FMD register.
2. Write the target address to the FMA register.
3. Write the flash write key and the WRITE bit (a value of 0xA442.0001) to the FMC register.
4. Poll the FMC register until the WRITE bit is cleared.
To perform an erase of a 1-KB page
1. Write the page address to the FMA register.
2. Write the flash write key and the ERASE bit (a value of 0xA442.0002) to the FMC register.
3. Poll the FMC register until the ERASE bit is cleared.
January 09, 2011
213
Texas Instruments-Production Data