TLC27L2 Datasheet, PDF (2/33 Pages) Texas Instruments – LinCMOSE PRECISION DUAL OPERATIONAL AMPLIFIERS

TLC27L2, TLC27L2A, TLC27L2B, TLC27L7
LinCMOS™ PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS052B – OCTOBER 1987 – REVISED AUGUST 1994
description (continued)
These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage
stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and low power consumption make these cost-effective
devices ideal for high gain, low frequency, low power applications. Four offset voltage grades are available
(C-suffix and I-suffix types), ranging from the low-cost TLC27L2 (10 mV) to the high-precision TLC27L7
(500 µV). These advantages, in combination with good common-mode rejection and supply voltage rejection,
make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available in LinCMOS™ operational amplifiers,
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27L2 and
TLC27L7. The devices also exhibit low voltage single-supply operation and ultra-low power consumption,
making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input
voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand – 100-mA surge currents without sustaining latch-up.
The TLC27L2 and TLC27L7 incorporate internal ESD-protection circuits that prevent functional failures at
voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in
handling these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-Suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55°C to 125°C.
equivalent schematic (each amplifier)
VDD
P3
P4
R6
R1
IN –
P1
IN +
R2
N5
P2
R5
C1
P5 P6
OUT
N1
N2
R3
D1 R4
N3
N4
D2
N6
N7
R7
GND
2
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