TL431-DIE Datasheet, PDF (2/4 Pages) Texas Instruments – PRECISION PROGRAMMABLE REFERENCE

TL431-DIE
SLVSC48 – JULY 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
BARE DIE INFORMATION
DIE THICKNESS
10.5 mils.
BACKSIDE FINISH
Silicon with backgrind
BACKSIDE
POTENTIAL
Floating
BOND PAD
METALLIZATION COMPOSITION
TiW/AlCu2%
BOND PAD
THICKNESS
1629.9 nm
DESCRIPTION
CATHODE
N/C
mountpad
REF
Table 1. Bond Pad Coordinates in Microns
PAD NUMBER
1
2
3
4
X MIN
783.59
169.926
22.86
771.398
Y MIN
841.248
841.248
22.86
107.66
X MAX
933.958
271.526
124.46
858.266
Y MAX
947.928
942.848
125.222
265.648
2
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