THS4221DBVT Datasheet, PDF (2/40 Pages) Texas Instruments – LOW-DISTORTION, HIGH-SPEED, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS

THS4221, THS4225
THS4222, THS4226
SLOS399G − AUGUST 2002 − REVISED JANUARY 2004
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted⁽¹⁾
UNIT
Supply voltage, V_S
Input voltage, V_I
Output current, I_O
Differential input voltage, V_ID
Continuous power dissipation
16.5 V
±V_S
100 mA
4V
See Dissipation Rating Table
Maximum junction temperature, T_J
Maximum junction temperature, continuous
operation, long term reliability T_J ⁽²⁾
Storage temperature range, T_stg
Lead temperature
1,6 mm (1/16 inch) from case for 10 seconds
150°C
125°C
−65°C to 150°C
300°C
HBM
THS4221/5
THS4222/6
2500 V
3000 V
ESD ratings:
CDM
1500 V
THS4221/5
MM
THS4222/6
150 V
200 V
(1) _{The absolute maximum ratings under any condition is limited by}
the constraints of the silicon process. Stresses above these
ratings may cause permanent damage. Exposure to absolute
maximum conditions for extended periods may degrade device
reliability. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those
specified is not implied.
(2) _{The maximum junction temperature for continuous operation is}
limited by package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device.
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This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE DISSIPATION RATINGS
PACKAGE
DBV (5)
Θ_JC
(°C/W)
55
Θ_JA⁽¹⁾
(°C/W)
255.4
POWER RATING⁽²⁾
T_A ≤ 25°C T_A = 85°C
391 mW 156 mW
D (8)
38.3 97.5
1.02 W
410 mW
DGN (8) ⁽³⁾
4.7
58.4
1.71 W 685 mW
DGK (8)
54.2
260
385 mW 154 mW
DGQ (10) ⁽³⁾
4.7
58
1.72 W 690 mW
(1) _{This data was taken using the JEDEC standard High-K test PCB.}
(2) _{Power rating is determined with a junction temperature of 125°C.}
This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the
junction temperature at or below 125°C for best performance and
long term reliability.
(3) _{The THS422x may incorporate a PowerPAD on the underside of}
the chip. This acts as a heatsink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure
to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI
technical brief SLMA002 and SLMA004 for more information
about utilizing the PowerPAD thermally enhanced package.
RECOMMENDED OPERATING CONDITIONS
Supply voltage, (V_S+ and V_S−)
Input common-mode voltage range
Dual supply
Single supply
MIN
±1.35
2.7
V_S− + 1.1
MAX
±7.5
15
V_S+ − 1.1
UNIT
V
V
THS4221 AND THS4225 SINGLE PACKAGE/ORDERING INFORMATION
PLASTIC SMALL OUTLINE
(D)
PACKAGED DEVICES
SOT-23⁽¹⁾
PLASTIC MSOP⁽²⁾
PowerPADE
(DBV)
SYM
(DGN)
SYM
PLASTIC MSOP⁽²⁾
(DGK)
SYM
THS4221D
THS4221DBV
BFS
THS4221DGN
BFT
THS4221DGK
BHX
THS4225D
—
—
THS4225DGN
BFU
THS4225DGK
BFY
(1) _{All packages are available taped and reeled. The R suffix standard quantity is 3000. The T suffix standard quantity is 250 (e.g., THS4221DBVT).}
(2) _{All packages are available taped and reeled. The R suffix standard quantity is 2500 (e.g., THS4221DGNR).}
PowerPAD is a trademark of Texas Instruments.
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