THS4130CDG4 Datasheet, PDF (2/36 Pages) Texas Instruments – HIGH-SPEED, LOW-NOISE, FULLY-DIFFERENTIAL I/O AMPLIFIERS

THS4130
THS4131
SLOS318H – MAY 2000 – REVISED MAY 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
T_A
0°C to +70°C
–40°C to +85°C
SMALL OUTLINE
(D)
THS4130CD
THS4131CD
THS4130ID
THS4131ID
AVAILABLE OPTIONS⁽¹⁾
PACKAGED DEVICES
MSOP PowerPAD™
MSOP
(DGN)
SYMBOL
(DGK)
THS4130CDGN
AOB
THS4130CDGK
THS4131CDGN
AOD
THS4131CDGK
THS4130IDGN
AOC
THS4130IDGK
THS4131IDGN
AOE
THS4131IDGK
SYMBOL
ATP
ATQ
ASO
ASP
EVALUATION
MODULES
THS4130EVM
THS4131EVM
—
—
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Over operating free-air temperature range,unless otherwise noted.
V_CC– to V_CC+
V_I
I_O ⁽²⁾
V_ID
T_J ⁽³⁾
T_J ⁽⁴⁾
T_A
T_STG
Supply voltage
Input voltage
Output current
Differential input voltage
Continuous total power dissipation
Maximum junction temperature
Maximum junction temperature, continuous operation, long-term reliability
Operating free-air temperature
C-suffix
I-suffix
Storage temperature
ESD ratings:
HBM
CDM
MM
UNIT
±33 V
±V_CC
150 mA
±6 V
See Dissipation Rating table
+150°C
+125°C
0°C to +70°C
–40°C to +85°C
–65°C to +150°C
2500 V
1500 V
200 V
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The THS413x may incorporate a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermally
dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could
permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about using the PowerPAD
thermally-enhanced package.
(3) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(4) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
DISSIPATION RATING TABLE
PACKAGE
D
DGN
DGK
θ_JA(1) (°C/W)
97.5
58.4
134
θ_JC (°C/W)
38.3
4.7
72
POWER RATING⁽²⁾
T_A= +25°C
1.02 W
T_A = +85°C
410 mW
1.71 W
685 mW
750 mW
300 mW
(1) This data was taken using the JEDEC standard High-K test PCB.
(2) Power rating is determined with a junction temperature of +125°C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below +125°C for best performance and
long-term reliability.
2
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