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THS3001IDR Datasheet, PDF (2/39 Pages) Texas Instruments – 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER
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THS3001
SLOS217H – JULY 1998 – REVISED SEPTEMBER 2009................................................................................................................................................. www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
TA
0°C to 70°C
-40°C to 85°C
SOIC
(D)
THS3001CD
THS3001CDR
THS3001ID
THS3001IDR
AVAILABLE OPTIONS(1)
PACKAGED DEVICE
MSOP
(DGN)
MSOP
SYMBOL
THS3001CDGN
THS3001CDGNR
ADP
THS3001HVCDGN
THS3001HVCDGNR
BNK
THS3001IDGN
THS3001IDGNR
ADQ
THS3001HVIDGN
BNJ
THS3001HVIDGNR
TRANSPORT MEDIA,
QUANTITY
Rails, 75
Tape and Reel, 2500
Rails, 75
Tape and Reel, 2500
Rails, 75
Tape and Reel, 2500
Rails, 75
Tape and Reel, 2500
EVALUATION
MODULE
THS3001EVM
--
--
--
--
--
--
--
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
VSS
Supply voltage, VCC+ to VCC-
VI
Input voltage
IO
Output current
VID
Differential input voltage
Continuous total power dissipation
TJ
Maximum junction temperature (2)
TJ
Maximum junction temperature, continuous operation, long term reliability(3)
TA
Operating free-air temperature
THS3001C,
THS3001HVC
THS3001I,
THS3001HVI
Tstg
Storage temperature
THS3001
THS3001HV UNITS
33
37
V
±VCC
175
±VCC
V
175
mA
±6
±6
V
See Dissipation Rating Table
150
150
°C
125
125
°C
0 to 70
0 to 70
°C
–40 to 85
–40 to 85
°C
–65 to 125
–65 to 125
°C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(3) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
DISSIPATION RATING TABLE
PACKAGE
θJC
(°C/W)
D (8)
38.3
DGN (8)
4.7
θJA (1)
(°C/W)
97.5
58.4
POWER RATING (2)
TA ≤ 25°C
1.02 W
TA = 85°C
410 mW
1.71 W
685 mW
(1) This data was taken using the JEDEC standard High-K test PCB.
(2) Power rating is determined with a junction temperature of 125°C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below 125°C for best performance and long
term reliability.
2
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