TC210 Datasheet, PDF (2/13 Pages) Texas Instruments – 192- x 165-PIXEL CCD IMAGE SENSOR

TC210
192- × 165-PIXEL CCD IMAGE SENSOR
SOCS009B – OCTOBER 1986 – REVISED MAY 1990
functional block diagram
165
1
ABG
6
IAG
3
ADB
4
OUT
ÇÇ1ÇÇ1 ÇÇÇÇSÇÇeriaÇÇlReÇÇgistÇÇer ÇÇÇÇÇÇ192 ÇÇ
Clear Gate
5 _SRG
2
VSS
12 Dark Pixels
192 Image Pixels
6 Dummy Pixels
TERMINAL
NAME
NO.
ABG
1
VSS
2
ADB
3
OUT
4
SRG
5
IAG
6
Terminal Functions
I/O
DESCRIPTION
I
Antiblooming gate
Amplifier ground
I
Supply voltage for amplifier drain bias
O Output signal
I
Serial-register gate
I
Image-area gate
functional description
The image-sensing area consists of 165 horizontal image lines each containing 192 photosensitive elements
(pixels). Each pixel is 13.75 µm (horizontal) by 16.00 µm (vertical). As light enters the silicon in the
image-sensing area, free electrons are generated and collected in potential wells (see Figure 1). During this
time, the antiblooming gate is activated by applying a burst of pulses. This prevents blooming caused by the
spilling of charge from overexposed elements into neighboring elements. The antiblooming gate is typically held
at a midlevel voltage during readout. The quantity of charge collected in each pixel is a linear function of the
incident light and the exposure time. After exposure and under dark conditions, the charge packets are
transferred from the image-area to the serial register at the rate of one image line per each clock pulse applied
to the image-area gate. Once an image line has been transferred into the serial register, the serial-register gate
can be clocked until all of the charge packets are moved out of the serial register to the charge detection node
at the amplifier input.
There are 12 dark pixels to the right of the 192 image pixels on each image line. These dark pixels are shielded
from incident light and the signal derived from them can be used to generate a dark reference for restoration
of the video black level on the next image line.
2-4
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