TAS5121I Datasheet, PDF (2/18 Pages) Texas Instruments – DIGITAL AMPLIIFIER POWER STAGE

TAS5121I
SLES122 – SEPTEMBER 2004
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
GENERAL INFOMATION
Terminal Assignment
The TAS5121I is offered in a thermally enhanced 36-pin PSOP3 (DKD) package. The DKD package has the
thermal pad on top.
DKD PACKAGE
(TOP VIEW)
GND
1
PWM_BP
2
GND
3
RESET
4
DREG_RTN
5
GVDD
6
M3
7
DREG
8
DGND
9
M1
10
M2
11
DVDD
12
SD
13
DGND
14
OTW
15
GND
16
PWM_AP
17
GND
18
36
GVDD_B
35
GVDD_B
34
GND
33
BST_B
32
PVDD_B
31
PVDD_B
30
OUT_B
29
OUT_B
28
GND
27
GND
26
OUT_A
25
OUT_A
24
PVDD_A
23
PVDD_A
22
BST_A
21
GND
20
GVDD_A
19
GVDD_A
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted⁽¹⁾
DVDD TO DGND
GVDD_x TO GND
PVDD_X TO GND (dc voltage)
PVDD_X TO GND⁽²⁾
OUT_X TO GND (dc voltage)
OUT_X TO GND⁽²⁾
BST_X TO GND (dc voltage)
BST_X TO GND⁽²⁾
PWM_XP, RESET, M1, M2, M3, SD, OTW
T_J
Maximum junction temperature range
Storage temperature
–0.3 V to 4.2 V
14.2 V
33.5 V
48 V
33.5 V
48 V
46 V
53 V
–0.3 V to DVDD + 0.3 V
–40°C to 150°C
–40°C to 125°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The duration should be less than 100 ns (see application note SLEA025).
2