OPA170-DIE Datasheet, PDF (2/5 Pages) Texas Instruments – SINGLE-SUPPLY, LOW-POWER OPERATIONAL AMPLIFIER VALUE LINE SERIES Check for Samples: OPA170-DIE

OPA170-DIE
SBOS680 – FEBRUARY 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
BARE DIE INFORMATION
DIE THICKNESS
10.5 mils.
BACKSIDE FINISH
Silicon with backgrind
BACKSIDE
POTENTIAL
Floating
BOND PAD
METALLIZATION COMPOSITION
AlCuTiN
BOND PAD
THICKNESS
605 nm
DESCRIPTION
+IN
V-
N/C
OUT
V+
-IN
Table 1. Bond Pad Coordinates in Microns
PAD NUMBER
1
2
3
4
5
6
X MIN
38.65
52.25
52.25
515.9
636
625.35
Y MIN
514
234.15
46.85
13
13
514
X MAX
113.65
127.25
127.25
590.9
711
700.35
Y MAX
589
309.15
121.85
88
88
589
2
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