CSD96370Q5M_15 Datasheet, PDF (2/20 Pages) Texas Instruments – Synchronous Buck NexFET™ Power Stage

CSD96370Q5M
SLPS265C – NOVEMBER 2010 – REVISED OCTOBER 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
T_A = 25°C (unless otherwise noted)
V_IN to P_GND ⁽²⁾
V_DD to P_GND
V_sw to P_GND
V_sw to P_GND (10ns)
ENABLE to P_GND(3)
PWM to P_GND(3)
BOOT to BOOT_R⁽³⁾
Human Body Model (HBM)
ESD Rating
Charged Device Model (CDM)
Power Dissipation, P_D
Storage Temperature Range, T_STG
Operating Junction Temperature Range
VALUE
–0.3 to 16
–0.3 to 6
–0.3 to 25
–7 to 27
–0.3 to V_DD + 0.3
–0.3 to V_DD + 0.3
–0.3 to V_DD + 0.3
2
500
12
–55 to 150
–40 to 150
UNIT
V
V
V
V
V
V
V
kV
V
W
°C
°C
(1) Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating
Conditions" is not implied. Exposure to Absolute Maximum rated conditions for extended periods may affect device reliability.
(2) V_IN to V_sw Max = 27V for 10ns
(3) Should not exceed 6V
RECOMMENDED OPERATING CONDITIONS
T_A = 25° (unless otherwise noted)
Parameter
Conditions
Gate Drive Voltage, V_DD
Input Supply Voltage, V_IN
Output Voltage, V_OUT
Continuous Output Current, I_OUT
Peak Output Current, I_OUT-PK(2)
Switching Frequency, f_SW
On Time Duty Cycle
V_IN = 12V, V_DD = 5V, V_OUT = 1.2V,
f_SW = 500kHz, L_OUT = 0.3µH⁽¹⁾
C_BST = 0.1µF (min)
Minimum PWM On Time
Operating Temperature
MIN MAX UNIT
4.5
5.5
V
3.3 13.2
V
5.5
V
40
A
60
A
200 2000 kHz
85%
40
ns
–40
125
°C
(1) Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across V_IN to P_GND pins.
(2) System conditions as defined in Note 1. Peak Output Current is applied for t_p = 50µs.
THERMAL INFORMATION
T_A = 25°C (unless otherwise noted)
PARAMETER
R_θJC
R_θJB
Thermal Resistance, Junction-to-Case (Top of package)⁽¹⁾
Thermal Resistance, Junction-to-Board⁽²⁾
MIN TYP MAX UNIT
20 °C/W
2 °C/W
(1) R_θJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2 oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch, 0.06-inch
(1.52-mm) thick FR4 board.
(2) R_θJB value based on hottest board temperature within 1mm of the package.
2
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