TPS2816 Datasheet, PDF (14/20 Pages) Texas Instruments – SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

TPS2816, TPS2817, TPS2818, TPS2819, TPS2828, TPS2829
SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER
SLVS160A – FEBRUARY 1997 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
MOSFETs are voltage-driven devices that require very little steady-state drive current. However, the large input
capacitance (200 pF to 3000 pF or greater) of these devices requires large current surges to reduce the turn-on
and turn-off times. The TPS2816 series of high-speed drivers can supply up to 2 A to a MOSFET, greatly
reducing the switching times. The fast rise times and fall times and short propagation delays allow for operation
in today’s high-frequency switching converters.
In addition, MOSFETs have a limited gate-bias voltage range, usually less than 20 V. The TPS2816 series of
drivers extends this operating range by incorporating an on-board series regulator with an input range up to 40 V.
This regulator can be used to power the drivers, the PWM chip, and other circuitry, providing the power
dissipation rating is not exceeded.
When using these devices, care should be exercised in the proper placement of the driver, the switching
MOSFET, and the bypass capacitor. Because of the large input capacitance of the MOSFET, the driver should
be placed close to the gate to eliminate the possibility of oscillations caused by trace inductance ringing with
the gate capacitance of the MOSFET. When the driver output path is longer than approximately 2 inches, a
resistor in the range of 10 Ω should be placed in series with the gate drive as close as possible to the MOSFET.
A ceramic bypass capacitor is also recommended to provide a source for the high-speed current transients that
the MOSFET requires. This capacitor should be placed between V_CC and GND of the driver (see Figures 20
and 21).
TPS2816
VCC
1
5
Regulator
Load
2
0.1 µF
3
4
Input
VDD
1
0.1 µF ₂
Figure 20. V_CC < 14 V
TPS2816
Regulator
5
+
4.7 µF
3
4
Input
Load
Figure 21. V_CC > 14 V
14
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