TPS3617-50 Datasheet, PDF (12/16 Pages) Texas Instruments – BATTERY-BACKUP SUPERVISOR FOR RAM RETENTION

TPS3617Ć50
BATTERYĆBACKUP SUPERVISOR
FOR RAM RETENTION
SLVS339B – DECEMBER 2000 – REVISED DECEMBER 2002
TYPICAL CHARACTERISTICS
HIGH-LEVEL OUTPUT VOLTAGE AT RESET
vs
HIGH-LEVEL OUTPUT CURRENT
5.1
Expanded View
5
TA = –40°C
4.9
TA = 25°C
TA = 0°C
4.8
HIGH-LEVEL OUTPUT VOLTAGE AT PFO
vs
HIGH-LEVEL OUTPUT CURRENT
6
5
TA = –40°C
TA = 25°C
4
TA = 0°C
3
4.7
TA = 85°C
4.6
VDD = 5 V
VBAT = GND
4.5
–5 –4.5 –4 –3.5 –3 –2.5 –2 –1.5 –1 –0.5 0
IOH – High-Level Output Current – mA
Figure 8
HIGH-LEVEL OUTPUT VOLTAGE AT PFO
vs
HIGH-LEVEL OUTPUT CURRENT
5.55
Expanded View
5.50
TA = –40°C
5.45
TA = 25°C
5.40
TA = 0°C
5.35
5.30
5.25
TA = 85°C
5.20
VDD = 5.5 V
5.15
PFI = 1.4 V
VBAT = GND
5.10
–200 –180 –160 –140 –120 –100 –80 –60 –40 –20 0
IOH – High-Level Output Current – µA
Figure 10
2
TA = 85°C
1
VDD = 5.5 V
PFI = 1.4 V
VBAT = GND
0
–2.5
–2
–1.5
–1
–0.5
0
IOH – High-Level Output Current – mA
Figure 9
LOW-LEVEL OUTPUT VOLTAGE AT RESET
vs
LOW-LEVEL OUTPUT CURRENT
3.5
VDD = 3.3 V
3 ^{VBAT = GND}
2.5
TA = 0°C
2
TA = 25°C
1.5
TA = 85°C
1
TA = –40°C
0.5
0
0
5
10
15
20
25
IOL – Low-Level Output Current – mA
Figure 11
12
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