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TMS370CX7X Datasheet, PDF (12/59 Pages) Texas Instruments – 8-BIT MICROCONTROLLER
TMS370Cx7x
8-BIT MICROCONTROLLER
SPNS034C – SEPTEMBER 1995 – REVISED FEBRUARY 1997
data EEPROM (continued)
Table 5. Data EEPROM and Program EPROM Control Registers Memory Map
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ADDRESS
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 101Ah (P01A)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 101Bh (P01B)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 101Ch (P01C)
101Dh (P01D)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 101Eh (P01E)
SYMBOL
DEECTL
EPCTLM
EPCTLL
NAME†
Data EEPROM control register
Reserved
Program EPROM control register – middle array
Reserved
Program EPROM control register – low array
† For the 24K-byte EPROM device, the program memory is controlled by P01C and P01E.
program EPROM
The TMS370C777 contains 24K bytes of program EPROM made up of one 16K-byte array and one 8K-byte
array. The 16K-byte array is located at address locations 2000h through 5FFFh, and the 8K-byte array is located
at address locations 6000h through 7FFFh, as shown in Table 6.
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ PARAMETER
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ EPROM size
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Memory mapped
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Control registers
Table 6. TMS370C777 EPROM Memory Map
16K Bytes at 2000h – 5FFFh
EPCTLL (P01E)
VALUE
24K Bytes
8K Bytes at 6000h – 7FFFh
EPCTLM (P01C)
As shown in Table 6 for the two EPROM areas, the 16K-byte array is controlled by register EPCTLL located at
101Eh (P01E), and the 8K-byte array is controlled by register EPCTLM located at 101Ch (P01C).
Reading the program-EPROM modules is identical to reading other internal memory. During programming, the
EPROM is controlled by the program EPROM control registers EPCTLL and EPCTLM. The program EPROM
modules’ features include:
D Programming
– In-circuit programming capability if VPP is applied to the MC pin
– Control register: Program EPROM programming is controlled by the program EPROM control registers
EPCTLL and EPCTLM, located at the addresses in PF frame 1 as shown in Table 5.
– Programming one EPROM module while executing the other
D Write-protection: Writes to the program EPROM are disabled under the following conditions:
– Reset: All programming to the EPROM module is halted.
– Low-power modes
– 13 V not applied to MC
program ROM
The program ROM consists of 24K bytes of mask-programmable ROM. The program ROM is used for
permanent storage of data or instructions. Programming of the mask ROM is performed at the time of device
fabrication. Memory addresses 7FE0h – 7FEBh is reserved for Texas Instruments (TI™). 7FECh to 7FFFh are
reserved for interrupt and reset vectors. Trap vectors, used with TRAP0 through TRAP15 instructions, are
located between addresses 7FC0h and 7FDFh.
TI is a trademark of Texas Instruments Incorporated.
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