TAS5611 Datasheet, PDF (12/28 Pages) Texas Instruments – 125W STEREO / 250W MONO PurePath™ HD ANALOG-INPUT POWER STAGE

TAS5611
SLAS681 – DECEMBER 2009
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
PVDD_X = 32.5V, GVDD_X = 12 V, VDD = 12 V, T_C (Case temperature) = 75°C, f_S = 400 kHz, unless otherwise specified.
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
I/O PROTECTION
V_uvp,G
V_uvp,hyst ⁽¹⁾
OTW1 ⁽¹⁾
OTW2 ⁽¹⁾
Undervoltage protection limit, GVDD_x and
VDD
Overtemperature warning 1
Overtemperature warning 2
9.5
V
0.6
V
95 100 105 °C
115 125 135 °C
OTW_hyst ⁽¹⁾
Temperature drop needed below OTW
temperature for OTW to be inactive after
OTW event.
25
°C
OTE ⁽¹⁾
Overtemperature error
OTE-OTW differential
145 155 165 °C
30
°C
OTE_hyst ⁽¹⁾
A reset needs to occur for SD to be released
following an OTE event
25
°C
OLPC
I_OC
Overload protection counter
Overcurrent limit protection
f_PWM = 400 kHz
Resistor – programmable, nominal peak
current in 1Ω load, R_OCP = 30kΩ
Resistor – programmable, nominal peak
current in 1Ω load, R_OCP = 22kΩ (add
Schottky diodes on all output nodes
OUT_X to GND_X)
2.6
ms
12.6
A
16.3
A
I_{OC_LATCHED}
Overcurrent limit protection
Resistor – programmable, nominal peak
current in 1Ω load, R_OCP = 64kΩ
Resistor – programmable, nominal peak
current in 1Ω load, R_OCP = 47kΩ (add
Schottky diodes on all output nodes
OUT_X to GND_X)
12.6
A
16.3
A
I_OCT
Overcurrent response time
Time from switching transition to flip-state
induced by overcurrent
150
ns
I_PD
Internal pulldown resistor at output of each
half bridge
Connected when RESET is active to
provide bootstrap charge. Not used in SE
mode.
3
mA
STATIC DIGITAL SPECIFICATIONS
V_IH
High level input voltage
V_IL
Low level input voltage
I_lkg
Input leakage current
OTW/SHUTDOWN (SD)
INPUT_X, M1, M2, M3, RESET
1.9
V
0.8 V
100 μA
R_{INT_PU}
Internal pullup resistance, OTW1 to VREG,
OTW2 to VREG, SD to VREG
20
26 32 kΩ
V_OH
High level output voltage
Internal pullup resistor
External pullup of 4.7 kΩ to 5 V
3 3.3 3.6
V
4.5
5
V_OL
FANOUT
Low level output voltage
Device fanout OTW1, OTW2, SD, CLIP,
READY
I_O = 4 mA
No external pullup
200 500 mV
30
devices
(1) Specified by design.
12
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