TC255P Datasheet, PDF (10/18 Pages) Texas Instruments – 336- × 244-pixel ccd image sensor

TC255P
336- × 244-PIXEL CCD IMAGE SENSOR
SOCS057 – JUNE 1996
optical characteristics, T_A = 40°C (unless otherwise noted)
PARAMETER
MIN
TYP
MAX UNIT
Sensitivity
No IR filter
With IR filter
350
mV/lx
45
Saturation signal, Vsat (see Note 11)
Maximum usable signal, Vuse
Blooming-overload ratio (see Note 12)
Antiblooming disabled, Interlace off
Antiblooming enabled
600
750
mV
200
250
mV
100
200
Image-area well capacity
50000 62500
electrons
Smear (see Notes 13 and 14)
Dark current
Dark signal
Interlace disabled,
TA = 21°C
0.00012
0.20
200
nA/cm2
µV
Pixel uniformity
Output signal = 60 mV ± 10 mV
15
mV
Column uniformity
Output signal = 60 mV ± 10 mV
0.5
mV
Shading
15
%
Electronic-shutter capability
1/15000
1/60
s
NOTES: 11. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
12. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming-overload ratio
is the ratio of blooming exposure to saturation exposure.
13. Smear is a measure of the error introduced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
to the ratio of the single-pixel transfer time to the exposure time using an illuminated section that is 1/10 of the image-area vertical
height with recommended clock frequencies.
14. The exposure time is 16.67 ms, the fast-dump clocking rate during vertical transfer is 12.5 MHz, and the illuminated section is 1/10
of the height of the image section.
timing requirements
tr
Rise time
tf
Fall time
ABG
IAG1, IAG2 (fast clear)
IAG1, IAG2 (image transfer)
SAG
SRG
ABG
IAG1, IAG2 (fast clear)
IAG1, IAG2 (image transfer)
SAG
SRG
MIN NOM MAX UNIT
10
40
10
10
10
20
ns
10
20
10
40
10
40
10
10
10
20
ns
10
20
10
40
2-10
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