TXS02326 Datasheet, PDF (1/35 Pages) Texas Instruments – DUAL-SUPPLY 2:1 SIM CARD MULTIPLEXER/TRANSLATOR WITH AUTOMATIC DETECTION AND SLOT DEDICATED DUAL LDO

TXS02326
www.ti.com
SCES795B – SEPTEMBER 2010 – REVISED NOVEMBER 2010
DUAL-SUPPLY 2:1 SIM CARD MULTIPLEXER/TRANSLATOR
WITH AUTOMATIC DETECTION AND SLOT DEDICATED DUAL LDO
Check for Samples: TXS02326
FEATURES
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• Level Translator
– V_I/O Range of 1.7 V to 3.3 V
• Low-Dropout (LDO) Regulator
– 50-mA LDO Regulator With Enable
– 1.8-V or 2.95-V Selectable Output Voltage
– 2.3-V to 5.5-V Input Voltage Range
– Very Low Dropout: 100 mV (Max) at 50 mA
• Control and Communication Through I²C
Interface With Baseband Processor
• ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-B)
– 1000-V Charged-Device Model (C101)
• Package
– 24-Pin QFN (4 mm x 4 mm)
RGE PACKAGE
(TOP VIEW)
IRQ
RSTX
SDN
BSI
SIM2CLK
SIM2I/O
24 23 22 21 20 19
1
18
2
17
3
Exposed 16
4 ^{Thermal Pad} 15
5
14
6
13
7 8 9 10 11 12
SIMI/O
SIMCLK
SIMRST
NC
SIM1CLK
SIM1I/O
Note: The Exposed Thermal Pad must be
connect to Ground.
DESCRIPTION/ORDERING INFORMATION
The TXS02326 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing
wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset
applications. It is a custom device which is used to extend a single SIM/UICC interface to be able to support two
SIMs/UICCs.
The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards.
It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces,
two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B
and 1.8-V Class-C interfaces, an integrated "fast-mode" 400 kb/s "slave" I2C control register interface for
configuration purposes, a 32-kHz clock input for internal timing generation, a shutdown input and a comparator
input detecting battery pack removal to safely power-down the two SIM cards, each equipped with two
programmable debounce counter (i.e. BSI input and SDN input) circuit realized by an 8 bit counter.
The voltage-level translator has two supply voltage pins. V_I/O sets the reference for the baseband interface and
can be operated from 1.7 V to 3.3 V. VSIM1 and VSIM2 are programmed to either 1.8 V or 2.95 V, each supplied
by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3 V to 5.5 V
and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.
T_A
–40°C to 85°C
ORDERING INFORMATION⁽¹⁾
PACKAGE ⁽²⁾
ORDERABLE PART NUMBER
QFN – RGE (Pin 1, Quadrant 2)
Tape and reel
QFN – RGE (Pin 1, Quadrant 1)
TXS02326RGER
TXS02326MRGER
TOP-SIDE MARKING
YJ326
YJ326
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated