TS5N412 Datasheet, PDF (1/15 Pages) Texas Instruments – 4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH

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FEATURES
• Low and Flat ON-State Resistance (r_on)
Characteristics Over Operating Range
(r_on = 3 Ω Typ)
• 0- to 10-V Switching on Data I/O Ports
• Bidirectional Data Flow With Near-Zero
Propagation Delay
• Low Input/Output Capacitance Minimizes
Loading and Signal Distortion
(C_io(OFF) = 20 pF Max, B Port)
• V_CC Operating Range From 4.75 V to 5.25 V
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
• ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
• Supports Both Digital and Analog
Applications
TS5N412
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER
HIGH-BANDWIDTH BUS SWITCH
SCDS207 – AUGUST 2005
APPLICATIONS
• PCI Interface
• Differential Signal Interface
• Memory Interleaving
• Bus Isolation
• Low-Distortion Signal Gating
DBQ OR PW PACKAGE
(TOP VIEW)
S1
1B1 2
1B2 3
1A 4
2B1 5
2B2 6
2A 7
GND 8
16 V_CC
15 OE
14 4B1
13 4B2
12 4A
11 3B1
10 3B2
9 3A
DESCRIPTION/ORDERING INFORMATION
The TS5N412 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass
transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for
minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also
features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.
Specifically designed to support high-bandwidth applications, the TS5N412 provides an optimized interface
solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The TS5N412 is a 4-bit 1-of-2 multiplexer/demultiplexer with a single output-enable (OE) input. The select (S)
inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is
enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is
high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging
current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
T_A
–40°C to 85°C
ORDERING INFORMATION
PACKAGE ⁽¹⁾
ORDERABLE PART NUMBER TOP-SIDE MARKING
SSOP (QSOP) – DBQ
TSSOP – PW
Tape and reel
Tape and reel
TS5N412DBQR
TS5N412PWR
YB412
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005, Texas Instruments Incorporated