TS5N214_10 Datasheet, PDF (1/18 Pages) Texas Instruments – 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH

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FEATURES
• Low and Flat ON-State Resistance (r_on)
Characteristics Over Operating Range
(r_on = 3 Ω Typ)
• 0- to 10-V Switching on Data I/O Ports
• Bidirectional Data Flow With Near-Zero
Propagation Delay
• Low Input/Output Capacitance Minimizes
Loading and Signal Distortion
(C_io(OFF) = 20 pF Max, B Port)
• V_CC Operating Range From 4.75 V to 5.25 V
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
• ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
• Supports Both Digital and Analog
Applications: PCI Interface, Differential Signal
Interface, Memory Interleaving, Bus Isolation,
Low-Distortion Signal Gating
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TS5N214
2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER
HIGH-BANDWIDTH BUS SWITCH
SCDS206 – AUGUST 2005
DBQ OR PW PACKAGE
(TOP VIEW)
1OE 1
S1 2
1B4 3
1B3 4
1B2 5
1B1 6
1A 7
GND 8
16 V_CC
15 2OE
14 S0
13 2B4
12 2B3
11 2B2
10 2B1
9 2A
DESCRIPTION/ORDERING INFORMATION
The TS5N214 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass
transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for
minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also
features low data I/O capacitance to minimize capacitive loading and signal distorion on the data bus. Specifically
designed to support high-bandwidth applications, the TS5N214 provides an optimized interface solution ideally
suited for broadband communications, networking, and data-intensive computing systems.
The TS5N214 is a 2-bit 1-of-4 multiplexer/demultiplexer with separate output-enable (1OE, 2OE) inputs. The
select (S0, S1) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the
multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow
between ports. When OE is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists
between the A and B ports.
This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging
current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
T_A
–40°C to 85°C
ORDERING INFORMATION
PACKAGE ⁽¹⁾
ORDERABLE PART NUMBER
TOP-SIDE MARKING
SSOP (QSOP) – DBQ Tape and reel
TS5N214DBQR
YB214
TSSOP – PW
Tape and reel
TS5N214PWR
YB214
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005, Texas Instruments Incorporated