TS5A3159-EP_15 Datasheet, PDF (1/26 Pages) Texas Instruments – 1-W SPDT ANALOG SWITCH

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FEATURES
• Controlled Baseline
– One Assembly/Test Site, One Fabrication
Site
• Enhanced Diminishing Manufacturing
Sources (DMS) Support
• Enhanced Product-Change Notification
• Qualification Pedigree ⁽¹⁾
• Specified Break-Before-Make Switching
• Low ON-State Resistance (1 Ω)
• Control Inputs Are 5-V Tolerant
• Low Charge Injection
• Excellent ON-State Resistance Matching
(1) Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not liited to,
Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this componenet beyond specified
performance and environmental limits.
TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
• Low Total Harmonic Distortion
• 1.65-V to 5.5-V Single-Supply Operation
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
• ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
APPLICATIONS
• Cell Phones
• PDAs
• Portable Instrumentation
SOT-23 PACKAGE
(TOP VIEW)
NO 1
GND 2
NC 3
6 IN
5 V₊
4 COM
DESCRIPTION/ORDERING INFORMATION
The TS5A3159-EP is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to
5.5 V. The device offers a low ON-state resistance and an excellent ON-state resistance matching with the
break-before-make feature to prevent signal distortion during the transferring of a signal from one channel to
another. The device has excellent total harmonic distortion (THD) performance and consumes very low power.
These features make this device suitable for portable audio applications.
Summary of Characteristics⁽¹⁾
Configuration
Number of channels
ON-state resistance (r_on)
ON-state resistance match (∆r_on)
ON-state resistance flatness (r_on(flat))
Turn-on/turn-off time (t_ON/t_OFF)
Break-before-make time (t_BBM)
Charge injection (Q_C)
Bandwidth (BW)
OFF isolation (O_ISO)
Crosstalk (X_TALK)
Total harmonic distortion (THD)
Leakage current (I_NO(OFF)/(I_NC(OFF))
Package option
2:1 Multiplexer/
Demultiplexer
(1 × SPDT)
1
1.1 Ω
0.1 Ω
0.15 Ω
20 ns/15 ns
12 ns
36 pC
100 MHz
–65 dB at 1 MHz
–66 dB at 1 MHz
0.01%
±20 nA
6-pin DBV
(1) V₊ = 5 V and T_A = 25°C
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2006, Texas Instruments Incorporated