TRF7003 Datasheet, PDF (1/8 Pages) Texas Instruments – MOSFET POWER AMPLIFIER

TRF7003
MOSFET POWER AMPLIFIER
D Wide Operating Frequency Range up to
1000 MHz
D High Output Power:
– Typical Value of 32 dBm at 4.8 V and 900
MHz
– Typical Value of 29 dBm at 3.6 V and
900 MHz
D High Gain:
– Typical Value of 9 dB at 4.8 V and
900 MHz at 32-dBm Output Power
D High Power-Added Efficiency (PAE):
– Typical Value of 50% at 32-dBm Output
Power
D Low Cost
D Extremely Rugged:
– Sustains 20:1 Load Mismatch
D Suitable for Various Wireless Applications
D Low Leakage Current <1 mA
D SOT-89 Plastic Power Package
D 1000 V Human Body Model ESD Protection
on Gate and Drain
SLWS058C – APRIL 1997 – REVISED JULY 1998
PK PACKAGE
(TOP VIEW)
G
S
D
description
The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET)
manufactured using the Texas Instruments RFMOS™ process. It is housed in a SOT-89 (PK) plastic power
package. The TRF7003, suitable for a variety of wireless applications, has been characterized for global
systems for mobile communications (GSM) power amplifier applications. The TRF7003, a rugged, low-cost
device, operates from a single-polarity positive power supply and has low leakage current. Typical power output
at 900 MHz is 32 dBm, with an associated power gain of 9 dB and 50-percent power-added efficiency (PAE).
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
RFMOS is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1998, Texas Instruments Incorporated
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