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TRF4400 Datasheet, PDF (1/21 Pages) Texas Instruments – SINGLE-CHIP 433-MHz RF TRANSMITTER
TRF4400
SINGLE-CHIP 433-MHz RF TRANSMITTER
D Single-Chip RF Transmitter for 433 MHz
ISM Band
D 420-MHz to 450-MHz Operation
D FM/FSK Operation for Transmit
D 24-Bit Direct Digital Synthesizer (DDS) With
11-Bit DAC
D On-Chip Voltage-Controlled Oscillator
(VCO) and Phase-Locked Loop (PLL)
D On-Chip Reference Oscillator
D Minimal External Components Required
D Low Power Consumption
D Typical Output Power of 7 dBm
SLWS113C –NOVEMBER 2000 – REVISED SEPTEMBER 2001
D Typical Output Frequency Resolution of
230 Hz
D Ultrafast Lock Times From DDS
Implementation
D Two Fully-Programmable Operational
Modes
D 2.2-V to 3.6-V Operation
D Flexible Serial Interface to TI MSP430
Microcontroller
D 24-Pin Plastic Thin-Shrink Small-Outline
Package (TSSOP)
PW PACKAGE
(TOP VIEW)
PD_OUT1
1
PLL_VCC
2
PD_SET
3
VCO_TANK1
4
VCO_TANK2
5
PLL_GND
6
DIG_GND
7
CLOCK
8
DATA
9
STROBE
10
MODE
11
STDBY
12
24
PD_OUT2
23
LOCKDET
22
PA_OUT
21
PA_GND
20
PA_VCC
19
GND
18
DIG_VCC
17
XOSC2
16
XOSC1
15
DIG_GND
14
TX_DATA
13
NC
description
The TRF4400 single-chip solution is an integrated circuit intended for use as a low cost FSK transmitter to
establish a frequency-agile RF link. The device is available in a 24-lead TSSOP package and is designed to
provide a fully-functional multichannel transmitter. The chip is intended for linear (FM) or digital (FSK) modulated
applications in the 433-MHz ISM band. The single-chip transmitter operates down to 2.2 V and is expressly
designed for low power consumption. The synthesizer has a typical channel spacing of approximately 230 Hz
to allow narrow-band as well as wide-band applications. Due to the narrow channel spacing of the direct digital
synthesizer (DDS), the DDS can be used to adjust the TX frequency and allows the use of inexpensive reference
crystals.
Two fully-programmable operation modes, Mode0 and Mode1, allow extremely fast switching between two
preprogrammed settings (e.g., TX_frequency_0/TX_frequency_1) without reprogramming the device. Each
functional block of the transmitter can be specifically enabled or disabled via the serial interface.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright  2001, Texas Instruments Incorporated
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