TRF1500 Datasheet, PDF (1/17 Pages) Texas Instruments – DUAL-BAND/DUAL-MODE PCS RECEIVER

TRF1500
DUAL-BAND/DUAL-MODE PCS RECEIVER
D Low-Noise Amplifier for Each Band
D RF Mixer for Each Band With Image
Rejection Configuration for High Band
D IF Amplifier for Both Low and High Bands
D Operates From a Supply Voltage Range of
3.6 V to 4 V
SLWS041A – JANUARY 1998
D Suitable for Portable Dual-Band/Dual-Mode
Cellular Telephones (IS136)
D 48-Pin Plastic Thin Quad Flatpack Package
(TQFP)
description
The TRF1500 is a dual-band/dual-mode personal communications system (PCS) receiver for cellular
telephones operating dual mode (analog and digital) in the 800-MHz band and single mode (digital) in the
1900-MHz band. The TRF1500 consists of a low-noise amplifier (LNA) and mixer for each band. The high band
uses an image rejection mixer for down conversion while the low band relies on an off-chip image rejection filter
between the LNA and mixer.
The local oscillator (LO) inputs additionally have buffered outputs that can be used in either single-ended or
differential mode for a phase-locked-loop (PLL) configuration. A state is also available that allows the low-band
LO to serve as the high-band LO through a mode-selectable frequency doubler.
A wideband mixer is also available for transmit loop architectures commonly used in advanced mobile phone
systems, global systems for mobile communications, and digital cellular systems.
Power consumption is low and can be further reduced by operating the TRF1500 in sleep mode. Typical power
consumption for each receiver function is shown in Table 1.
The TRF1500 is available in a 48-pin plastic thin-quad flatpack package (TQFP) and is characterized for
operation from –30 _C to 85 _C operating free-air temperature.
Table 1. Typical Power Consumption at V_CC = 3.75 V
FUNCTION
Sleep mode
Low band
High band
Transmit mixer
Frequency doubler
TYPICAL POWER
38
85
190
50
12
UNIT
µW
mW
mW
mW
mW
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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Copyright © 1997, Texas Instruments Incorporated
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