TPS79133DBVRG4 Datasheet, PDF (1/21 Pages) Texas Instruments – ULTRALOW NOISE HIGH PSRR FAST RF 100-mA LOW- DROPOUT LINEAR REGUATORS

www.ti.com
Actual Size
(3,00 mm x 3,00 mm)
Actual Size
(3,00 mm x 3,00 mm)
TPS79101, TPS79118
TPS79133, TPS79147
SLVS325C − MARCH 2001 − REVISED MAY 2002
ULTRALOW NOISE, HIGH PSRR, FAST RF 100ĆmA
LOWĆDROPOUT LINEAR REGULATORS
FEATURES
D 100-mA Low-Dropout Regulator With EN
D Available in 1.8-V, 3.3-V, 4.7-V, and Adj.
D High PSRR (70 dB at 10 kHz)
D Ultralow Noise (15 µV_RMS)
D Fast Start-Up Time (63 µs)
D Stable With Any 1-µF Ceramic Capacitor
D Excellent Load/Line Transient
D Very Low Dropout Voltage
(38 mV at Full Load, TPS79147)
D 5-Pin SOT23 (DBV) Package
D TPS792xx Provides EN Options
APPLICATIONS
D Cellular and Cordless Telephones
D VCOs
D RF
D Bluetooth, Wireless LAN
D Handheld Organizers, PDA
DESCRIPTION
The TPS791xx family of low-dropout (LDO)
low-power linear voltage regulators features high
power supply rejection ratio (PSRR), ultralow
noise, fast start-up, and excellent line and load
transient responses in a small outline, SOT23,
package. Each device in the family is stable, with
a small 1-µF ceramic capacitor on the output. The
family uses an advanced, proprietary BiCMOS
fabrication process to yield extremely low dropout
voltages (e.g., 38 mV at 100 mA, TPS79147).
Each device achieves fast start-up times
(approximately 63 µs with a 0.001 µF bypass
capacitor) while consuming very low quiescent
current (170 µA typical). Moreover, when the
device is placed in standby mode, the supply
current is reduced to less than 1 µA. The
TPS79118 exhibits approximately 15 µV_RMS of
output voltage noise with a 0.1 µF bypass
capacitor. Applications with analog components
that are noise sensitive, such as portable RF
electronics, benefit from the high PSRR and low
noise features as well as the fast response time.
DBV PACKAGE
(TOP VIEW)
IN 1 5 OUT
GND
2
EN 3 4 BYPASS
Fixed Option
DBV PACKAGE
(TOP VIEW)
IN 1 6 OUT
GND
25
FB
EN 3 4 BYPASS
Adjustable Option
TPS79133
RIPPLE REJECTION
vs
FREQUENCY
100
VI = 4.3 V
90 Co = 10 µF
C(byp) = 0.01 µF
80
IO = 100 mA
70
60
50
IO = 10 mA
40
30
20
10 100 1 k 10 k 100 k 1 M 10 M
f − Frequency − Hz
TPS79133
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
0.4
0.35
VO = 4.3 V
Co = 1 µF
0.3
C(byp) = 0.1 µF
0.25
0.2
IO = 100 mA
0.15
0.1 ^{IO = 1 mA}
0.05
0
100
1k
10 k
f − Frequency − Hz
100 k
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
Bluetooth is a trademark owned by the Bluetooth SIG, Inc.
PRODUCTION DATA information is current as of publication date. Products
conform to specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all parameters.
Copyright  2002, Texas Instruments Incorporated