TPS78915 Datasheet, PDF (1/16 Pages) Texas Instruments – ULTRALOW-POWER LOW-NOISE 100-mA LOW-DROPOUT LINEAR REGULATORS

TPS78915, TPS78918, TPS78925, TPS78928, TPS78930
ULTRALOW-POWER LOW-NOISE 100-mA
LOW-DROPOUT LINEAR REGULATORS
SLVS300A – SEPTEMBER 2000 – REVISED MAY 2001
D 100-mA Low-Dropout Regulator
D Available in 1.5-V, 1.8-V, 2.5-V, 2.8-V, 3.0-V
D Output Noise Typically 56 µV_RMS
(TPS78930)
D Only 17 µA Quiescent Current at 100 mA
D 1 µA Quiescent Current in Standby Mode
D Dropout Voltage Typically 115 mV at 100 mA
(TPS78930)
D Over Current Limitation
D –40°C to 125°C Operating Junction
Temperature Range
D 5-Pin SOT-23 (DBV) Package
description
The TPS789xx family of low-dropout (LDO)
voltage regulators offers the benefits of
low-dropout voltage, ultralow-power operation,
low-output noise, and miniaturized packaging.
These regulators feature low-dropout voltages
and ultralow quiescent current compared to
conventional LDO regulators. An internal resistor,
in conjunction with an external bypass capacitor,
creates a low-pass filter to reduce the noise. The
TPS78930 exhibits only 56 µV_RMS of output
voltage noise using 0.01 µF bypass and 10 µF
output capacitors. Offered in a 5-terminal small
outline integrated-circuit SOT-23 package, the
TPS789xx series devices are ideal for
micropower operations, low output noise, and
where board space is limited.
The usual PNP pass transistor has been replaced
by a PMOS pass element. Because the PMOS
pass element behaves as a low-value resistor, the
dropout voltage is very low, typically 115 mV at
100 mA of load current (TPS78930), and is
directly proportional to the load current. The
quiescent current is ultralow (17 µA typically) and
is stable over the entire range of output load
current (0 mA to 100 mA). Intended for use in
portable systems such as laptops and cellular
phones, the ultralow-dropout voltage feature and
ultralow-power operation result in a significant
increase in system battery operating life.
DBV PACKAGE
(TOP VIEW)
IN
1
5
OUT
GND
2
EN
3
4
BYPASS
TPS78930
GROUND CURRENT
vs
JUNCTION TEMPERATURE
21
VI = 4 V
20 ^{Co = 4.7 µF}
19
IO = 100 mA
18
IO = 1 mA
17
16
15
14
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ – Junction Temperature – °C
TPS78930
OUTPUT SPECTRAL NOISE DENSITY
vs
1200
FREQUENCY
1000
VI = 4 V
Co = 4.7 µF
C(byp) = 0.1 µF
800
600
IO = 100 mA
400
200
IO = 1 mA
0
100
1k
10k
100k
f – Frequency – Hz
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright  2001, Texas Instruments Incorporated
1