TPS737XX_09 Datasheet, PDF (1/22 Pages) Texas Instruments – 1A Low-Dropout Regulator with Reverse Current Protection

TPS737xx
www.ti.com.................................................................................................................................................... SBVS067I – JANUARY 2006 – REVISED MARCH 2009
1A Low-Dropout Regulator
with Reverse Current Protection
FEATURES
1
•2 Stable with 1.0µF or Larger Ceramic Output
Capacitor
• Input Voltage Range: 2.2V to 5.5V
• Ultra-Low Dropout Voltage: 130mV typ at 1A
• Excellent Load Transient Response—Even
With Only 1.0µF Output Capacitor
• NMOS Topology Delivers Low Reverse
Leakage Current
• 1.0% Initial Accuracy
• 3% Overall Accuracy Over Line, Load, and
Temperature
• Less Than 20nA typical I_Q in Shutdown Mode
• Thermal Shutdown and Current Limit for Fault
Protection
• Available in Multiple Output Voltage Versions
– Adjustable Output: 1.20V to 5.5V
– Custom Outputs Available Using Factory
Package-Level Programming
APPLICATIONS
• Point of Load Regulation for DSPs, FPGAs,
ASICs, and Microprocessors
• Post-Regulation for Switching Supplies
• Portable/Battery-Powered Equipment
DESCRIPTION
The TPS737xx family of linear low-dropout (LDO)
voltage regulators uses an NMOS pass element in a
voltage-follower configuration. This topology is
relatively insensitive to output capacitor value and
ESR, allowing a wide variety of load configurations.
Load transient response is excellent, even with a
small 1.0µF ceramic output capacitor. The NMOS
topology also allows very low dropout.
The TPS737xx family uses an advanced BiCMOS
process to yield high precision while delivering very
low dropout voltages and low ground pin current.
Current consumption, when not enabled, is under
20nA and ideal for portable applications. These
devices are protected by thermal shutdown and
foldback current limit.
DRB PACKAGE
3mm x 3mm SON
(TOP VIEW)
OUT 1
N/C 2
NR/FB 3
GND 4
8 IN
7 N/C
6 N/C
5 EN
DCQ PACKAGE
SOT223
(TOP VIEW)
Optional
V_IN
OFF
ON
IN
OUT
TPS737xx
EN GND FB
Typical Application Circuit
V_OUT
1.0mF
6 TAB IS GND
1 2345
IN GND EN
OUT NR/FB
1
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Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2009, Texas Instruments Incorporated