TPS65150QPWPRQ1 Datasheet, PDF (1/27 Pages) Texas Instruments – Low Input Voltage, Compact LCD Bias IC With VCOM Buffer

Actual Size
6,4 mm x 7,8 mm
TPS65150-Q1
www.ti.com
SLVSBX4A – JUNE 2013 – REVISED SEPTEMBER 2013
Low Input Voltage, Compact LCD Bias IC With VCOM Buffer
Check for Samples: TPS65150-Q1
FEATURES
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• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following
Results:
– Device Temperature Grade 1: –40°C to
125°C Ambient Operating Temperature
Range
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C6
• 1.8-V to 6-V Input Voltage Range
• Integrated VCOM Buffer
• High Voltage Switch to Isolate VGH
• Gate Voltage Shaping of VGH
• 2-A Internal MOSFET Switch
• Main Output V_S up to 15 V With < 1% Output
Voltage Accuracy
• Virtual Synchronous Converter Technology
• Negative Regulated Charge Pump Driver VGL
• Positive Regulated Charge Pump Driver VGH
• Adjustable Power On Sequencing
• Adjustable Fault Detection Timing
• Gate Drive Signal for external isolation
MOSFET
• Thermal Shutdown
• Available in TSSOP-24 Package
APPLICATIONS
• TFT LCD Displays for Notebooks
• TFT LCD Display for Monitor
• Car Navigation Display
DESCRIPTION
The TPS65150-Q1 offers a very compact and small
power-supply solution that provides all three voltages
required by thin film transistor (TFT) LCD displays.
With an input voltage range of 1.8 V to 6 V, the
device is ideal for notebooks powered by a 2.5-V or
3.3-V input rail or monitor applications with a 5-V
input-voltage rail. Additionally the TPS65150-Q1
provides an integrated high-current buffer to provide
the VCOM voltage for the TFT backplane.
Two regulated adjustable charge-pump drivers
provide the positive VGH and negative VGL bias
voltages for the TFT. The device incorporates
adjustable power-on sequencing for VGL as well as
for VGH. This avoids any additional external
components to implement application-specific
sequencing. The device has an integrated high-
voltage switch to isolate VGH. For the QFN package
(RGE), contact TI sales.
TYPICAL APPLICATION
R8
500 kW
R7
500 kW
C6 1 nF
Vin
5V
L1
3.9 µH
D1
VS
13.5 V/450 mA
VGL
-5 V/20 mA
C3
0.33 µF
C8
220 nF
C1
22 µF
C7
D2
0.33 µF
R3
620 kW
D3
R4
150 kW
VGH
Control Signal
C9
2.2 nF
IN VIN
DRVN
SW SW
SUP
FBN
FB
REF
DRVP
GND _TPS65150-Q1 FBP
PGND
CPI
CPI
PGND
VGH
CTRL
VCOM
COMP
GD
C10 C11 C12
22 pF 10 nF 10 nF
C13
100 nF
VIN
C14 ^D4
1 µF
C16 D5
0.33 µF
C15
22 pF
R1
820 kW
R2
75 kW
C2
22 µF
C4
0.33 µF
CPI
R5
1 MW
VGH
23 V/20 mA
VCOM
Output
C5
1 µF
R6
56 kW
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated