TPS65030 Datasheet, PDF (1/29 Pages) Texas Instruments – POWER MANAGEMENT IC for USB-OTG

TPS65030
www.ti.com
POWER MANAGEMENT IC for USB-OTG
SLVS620 – FEBRUARY 2006
FEATURES
• 4 Regulated Output Voltages with 3%
Tolerance
– Fractional Charge Pump for 5 V/100 mA
– Fractional Charge Pump for 1.5 V/200 mA
– Doubling Charge Pump With LDO Mode for
3.3 V/22 mA
– LDO for 1.8 V/60 mA
• Switching Frequency 1 MHz
• 3 V to 5 V Operating Input Voltage Range at
V_CC Pin
• Sleep Mode Sets Vout2 and Vout3 Into LDO
Mode
• Sleep Mode Reduces Quiescent Current of
Vout2, Vout3, and Vout4 to 8 µA Each
• internal Bus Switch
• Vbus Comparator
• Internal Soft Start Limits Inrush Current
• Low Input Current Ripple and Low EMI
• Overcurrent and Overtemperature Protected
• Undervoltage Lockout With Hysteresis
• Ultra-Small 2,5 mm x 2,7 mm Chip Scale
Package Applications
APPLICATIONS
• Power Supply for USB OTG for:
– Cellular Phones
– Smart Phones
– PDAs
– Handheld PCs
– Digital Cameras
– Camcorders
DESCRIPTION
The TPS65030 contains three charge pumps and one
LDO to generate all supply voltages necessary for an
USB On-The-Go (OTG) implementation using
TUSB6010. The charge pumps are optimized for a
single Li-Ion cell input or for 5 V from the USB bus.
The input voltage range is 3 V to 5 V for the battery
voltage. High efficiency is achieved by using
fractional conversion techniques for the charge
pumps in combination with a power saving sleep
mode. The current controlled charge pumps in
addition ensure low input current ripple and low EMI.
Small size external ceramic capacitors are required to
build a complete power supply solution. To reduce
board space to a minimum, the device switches at
1-MHz operating frequency, and is available in a
small 25-ball lead free chip scale package (YZK).
3 V . . .4.2 V (5 V)
10 mF
TPS65030
VIN
Vbus
VIN
EN1 (5 V)
EN2 (3.3 V
and 1.5 V)
EN3 (1.8 V)
SLEEP
Charge CF1A+
Pump
CF1A−
CF1B+
CF1B−
Vout2
PGood
SW_EN1
SW_EN2
Test SRP
PGND
PGND
GND
Charge CF2+
Pump
CF2−
Vout3
Charge CF3+
Pump
CF3−
Vout4
LDO
C_o1
4.7 mF
1 mF
1 mF
C_o2
1 mF
100 nF
C_o3
10 mF
1 mF
C_o4
1 mF
5 V/100 mA
3.3 V/22 mA
1.5 V/200 mA
1.8 V/60 mA
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006, Texas Instruments Incorporated