TPS54061-Q1_15 Datasheet, PDF (1/37 Pages) Texas Instruments – Wide-Input, 60-V, 200-mA Synchronous Step-Down DC-DC Converter With Low IQ

TPS54061-Q1
www.ti.com
SLVSBM7 – MARCH 2013
Wide-Input, 60-V, 200-mA Synchronous Step-Down DC-DC Converter With Low I_Q
Check for Samples: TPS54061-Q1
FEATURES
1
• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following
Results:
– Device Temperature Grade 1: –40°C to
125°C Ambient Operating Temperature
Range
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C3B
• Integrated High-Side and Low-Side MOSFETs
• Diode Emulation for Light-Load Efficiency
• Peak-Current Mode Control
• 90-µA Operating Quiescent Current
• 1.4-µA Shutdown Supply Current
• 50-kHz to 1.1-MHz Adjustable Switching
Frequency
• Synchronizes to External Clock
• 0.8 V ±1% Voltage Reference
• Stable With Ceramic Output Capacitors or
Low-Cost Aluminum Electrolytic
• Cycle-by-Cycle Current Limit, Thermal, OVP
and Frequency Foldback Protection
• 3-mm × 3-mm With Thermal Pad
• –40°C to 150°C Operating Junction
Temperature
APPLICATIONS
• Low-Power Standby or Bias Voltage Supplies
• High-Efficiency Replacement for High-Voltage
Linear Regulators
SIMPLIFIED SCHEMATIC
VIN
VIN
BOOT
TPS54061
EN
PH
VOUT
DESCRIPTION
The TPS54061-Q1 device is a 60-V, 200-mA,
synchronous step-down dc-dc converter with
integrated high-side and low-side MOSFETs. Current-
mode control provides simple external compensation
and flexible component selection. The non-switching
supply current is 90 µA. Using the enable pin reduces
the shutdown supply current to 1.4 µA.
To increase light-load efficiency, the low-side
MOSFET emulates a diode when the inductor current
reaches zero.
The internal undervoltage lockout setting is 4.5 V, but
using two resistors on the enable pin can increase
the setting. The internal slow-start time controls the
output-voltage start-up ramp.
The adjustable switching-frequency range allows
optimization of efficiency and external component
size. Frequency foldback and thermal shutdown
protect the part during an overload condition.
The TPS54061-Q1 enables small designs by
integrating the MOSFETs and boot recharge diode,
and by minimizing the IC footprint with a small 3-mm
× 3-mm thermally enhanced VSON package.
100
V_IN = 12 V
90
80
70
60
50
40
30
20
10
0
0.001
EFFICIENCY
V_OUT = 5 V, f_SW = 50 kHz
V_OUT = 5 V, f_SW = 400 kHz
V_OUT = 3.3 V, f_SW = 400 kHz
0.010
Load Current (A)
0.100
RT /CLK
VSNS
COMP
GND
PowerPAD
1
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated