TPS1101 Datasheet, PDF (1/10 Pages) Texas Instruments – SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
D Low r_DS(on) . . . 0.09 Ω Typ at V_GS = – 10 V
D 3 V Compatible
D Requires No External V_CC
D TTL and CMOS Compatible Inputs
D V_GS(th) = – 1.5 V Max
D Available in Ultrathin TSSOP Package (PW)
D ESD Protection Up to 2 kV per
MIL-STD-883C, Method 3015
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
D PACKAGE
(TOP VIEW)
SOURCE 1
SOURCE 2
SOURCE 3
GATE 4
8 DRAIN
7 DRAIN
6 DRAIN
5 DRAIN
D PACKAGE
description
The TPS1101 is a single, low-r_DS(on), P-channel,
enhancement-mode MOSFET. The device has
been optimized for 3-V or 5-V power distribution
PW PACKAGE
in battery-powered systems by means of the
Texas Instruments LinBiCMOS™ process. With a
maximum V_GS(th) of – 1.5 V and an I_DSS of only
0.5 µA, the TPS1101 is the ideal high-side switch
for low-voltage, portable battery-management
systems where maximizing battery life is a primary
concern. The low r_DS(on) and excellent ac
characteristics (rise time 5.5 ns typical) of the
TPS1101 make it the logical choice for
PW PACKAGE
(TOP VIEW)
low-voltage switching applications such as power
NC
1
16
NC
switches for pulse-width-modulated (PWM)
SOURCE
2
15
DRAIN
controllers or motor/bridge drivers.
SOURCE
3
14
DRAIN
The ultrathin thin shrink small-outline package or
TSSOP (PW) version fits in height-restricted
places where other P-channel MOSFETs cannot.
The size advantage is especially important where
board height restrictions do not allow for an
SOURCE
4
SOURCE
5
SOURCE
6
GATE
7
NC
8
13
DRAIN
12
DRAIN
11
DRAIN
10
DRAIN
9
NC
small-outline integrated circuit (SOIC) package.
Such applications include notebook computers,
NC – No internal connection
personal digital assistants (PDAs), cellular
telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other
P-channel MOSFETs in SOIC packages.
AVAILABLE OPTIONS
PACKAGED DEVICES†
CHIP FORM
TJ
SMALL OUTLINE
TSSOP
(Y)
(D)
(PW)
– 40°C to 150°C
TPS1101D
TPS1101PWLE
TPS1101Y
† _{The D package is available taped and reeled. Add an R suffix to device type (e.g.,}
TPS1101DR). The PW package is only available left-end taped and reeled (indicated by
the LE suffix on the device type; e.g., TPS1101PWLE). The chip form is tested at 25°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinBiCMOS is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1995, Texas Instruments Incorporated
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
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