TMS4C2972 Datasheet, PDF (1/26 Pages) Texas Instruments – 245760 BY 12-BIT FIELD MEMORY

D 2949120 Bits of Memory
D Organization: 245 760 Words × 12 Bits
D Single 5-V Power Supply (± 10% Tolerance)
D Upwardly and Pin-to-Pin Compatible With
TMS4C2970 and TMS4C2971
D 2-Port Memory With FIFO Operation
– Full-Word Continuous Read / Write
– Asynchronous Read / Write
D Optional Random-Block Access Function
(40 Words per Block) Enabled During Reset
Operation, Two Modes for Write Access:
D0- or IE-Controlled
D Fully Static (Refresh-Free and Infinite
Length of Clocking Pauses)
D Write-Mask Function by Input Enable (IE)
D Cascade Connection Capability
D High-Speed Read / Write Operation
ACCESS CYCLE TIME
TIME READ WRITE
(MAX) (MIN) (MIN)
TMS4C2972-24 19 ns 24 ns 24 ns
TMS4C2972-26 21 ns
TMS4C2972-28 23 ns
26 ns
28 ns
26 ns
28 ns
D 16M-Bit CMOS DRAM Process
Technology
D High-Reliability Plastic 36-Lead
Surface-Mount Shrink Small-Outline
Package ( SSOP) (DT Suffix)
description
TMS4C2972
245760 BY 12-BIT
FIELD MEMORY
SMGS671 – OCTOBER 1997
DT PACKAGE
( TOP VIEW )
V_SS1 1
D11 2
D10 3
D9 4
D8 5
D7 6
D6 7
D5 8
D4 9
D3 10
D2 11
D1 12
D0 13
SWCK 14
RSTW 15
WE 16
IE 17
V_DD1 18
36 V_SS2
35 Q11
34 Q10
33 Q9
32 Q8
31 Q7
30 Q6
29 Q5
28 Q4
27 Q3
26 Q2
25 Q1
24 Q0
23 SRCK
22 RSTR
21 RE
20 OE
19 V_DD2
PIN NOMENCLATURE
IE
WE
SWCK
RSTW
D0 – D11
OE
RE
SRCK
RSTR
Q0 – Q11
VDD1 – VDD2
VSS1 –VSS2
Input Enable
Write Enable
Serial-Write Clock
Reset Write
Data Inputs
Output Enable
Read Enable
Serial-Read Clock
Reset Read
Data Outputs
Power
Ground
The TMS4C2972 is a field memory (FMEM) that is upwardly and pin-to-pin compatible with the TMS4C2970
and TMS4C2971, except for the consequences of the block size change (40 instead of 80 words per block) on
old data access mode enabling (see the section titled ‘‘old-/new-data access”).
The device is a two-port memory; data is written in through a 12-bit-wide write port and is read out through a
12-bit-wide read port. Both ports may be operated simultaneously and/or asynchronously. Dynamic storage
cells are employed for main data memory to achieve high storage density, but the TMS4C2972 refreshes its
cells automatically so that device operation appears fully static to the user. All internal pointers and registers
are fully static so that read and write operations can be interrupted for indefinite periods of time without loss of
data.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
• POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
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