TMS44100 Datasheet, PDF (1/25 Pages) Texas Instruments – 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES

TMS44100, TMS44100P, TMS46100, TMS46100P
4194304-WORD BY 1-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS561A – MARCH 1995 – REVISED JUNE 1995
D Organization . . . 4 194304 × 1
D Single 5 V Power Supply, for TMS44100 / P
(± 10% Tolerance)
D Single 3.3 V Power Supply, for TMS46100 / P
(± 10% Tolerance)
D Low Power Dissipation ( TMS46100P only)
– 200-µA CMOS Standby
– 200-µA Self Refresh
– 300-µA Extended-Refresh Battery
Backup
D Performance Ranges:
ACCESS ACCESS ACCESS READ
TIME TIME TIME OR WRITE
(tRAC) (tCAC) (tAA)
(MAX) (MAX) (MAX)
CYCLE
(MIN)
’4x100/P-60
60 ns 15 ns 30 ns 110 ns
’4x100/P-70
70 ns 18 ns 35 ns 130 ns
’4x100/P-80
80 ns 20 ns 40 ns 150 ns
D Enhanced Page-Mode Operation for Faster
Memory Access
D CAS-Before-RAS ( CBR) Refresh
D Long Refresh Period
– 1024-Cycle Refresh in 16 ms
– 128 ms (Max) for Low-Power,
Self-Refresh Version ( TMS4x100P)
D 3-State Unlatched Output
D Texas Instruments EPIC™ CMOS Process
D Operating Free-Air Temperature Range
0°C to 70°C
description
DGA PACKAGE
( TOP VIEW )
DJ PACKAGE
( TOP VIEW )
D1
W2
RAS 3
NC 4
A10 5
26 V_SS
25 Q
D1
W2
24 CAS RAS 3
23 NC
NC 4
22 A9
A10 5
26 V_SS
25 Q
24 CAS
23 NC
22 A9
A0 9
A1 10
A2 11
A3 12
V_CC 13
18 A8
17 A7
16 A6
15 A5
14 A4
A0 9
A1 10
A2 11
A3 12
V_CC 13
18 A8
17 A7
16 A6
15 A5
14 A4
PIN NOMENCLATURE
A0 – A10
CAS
D
NC
Q
RAS
W
VCC
VSS
Address Inputs
Column-Address Strobe
Data In
No Connection
Data Out
Row-Address Strobe
Write Enable
5-V or 3.3-V Supply
Ground
The TMS4x100 series are high-speed,
4 194 304-bit dynamic random-access memories,
organized as 4 194 304 words of one bit each. The
TMS4x100P series are high-speed, low-power,
self-refresh with extended-refresh, 4 194 304-bit
dynamic random-access memories, organized as
4 194 304 words of one bit each. Both series
employ state-of-the-art EPIC™ (Enhanced
Performance Implanted CMOS) technology for
high performance, reliability, and low voltage.
DEVICE
TMS44100
TMS44100P
TMS46100
TMS46100P
POWER
SUPPLY
5V
5V
3.3 V
3.3 V
SELF-REFRESH
BATTERY
BACKUP
REFRESH
CYCLES
—
1024 in 16 ms
YES
1024 in 128 ms
—
1024 in 16 ms
YES
1024 in 128 ms
These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines
are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.
The TMS4x100 and TMS4x100P are offered in a 20- / 26-lead plastic surface-mount small-outline ( TSOP)
package (DGA suffix) and a 300-mil 20- / 26-lead plastic surface-mount SOJ package (DJ suffix). Both packages
are characterized for operation from 0°C to 70°C.
EPIC is a trademark of Texas Instruments Incorporated.
ADVANCE INFORMATION concerns new products in the sampling or
preproduction phase of development. Characteristic data and other
specifications are subject to change without notice.
Copyright © 1995, Texas Instruments Incorporated
• POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
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