TMS418169A Datasheet, PDF (1/29 Pages) Texas Instruments – 1048576 BY 16-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES

This data sheet is applicable to TMS418169A
and TMS428169A symbolized by Revision “E”,
and subsequent revisions as described in the
device symbolization section.
D Organization . . . 1 048576 by 16 Bits
D Single 5-V Power Supply for TMS418169A
(± 10% Tolerance)
D Single 3.3-V Power Supply for TMS428169A
(± 0.3 V Tolerance)
D 1 024-Cycle Refresh in 16 ms
D Performance Ranges:
ACCESS ACCESS ACCESS READ OR
TIME TIME TIME
EDO
tRAC tCAC
MAX MAX
tAA
MAX
CYCLE
MIN
’418169A-50 50 ns 13 ns 25 ns 20 ns
’418169A-60 60 ns 15 ns 30 ns 25 ns
’418169A-70 70 ns 18 ns 35 ns 30 ns
’428169A-60 60 ns 15 ns 30 ns 25 ns
’428169A-70 70 ns 18 ns 35 ns 30 ns
D Extended-Data-Out (EDO) Operation
D xCAS-Before-RAS ( xCBR) Refresh
D 3-State Unlatched Output
D Low Power Dissipation
D High-Reliability Plastic 42-Lead
400-Mil-Wide Surface-Mount Small-Outline
J-Lead (SOJ) Package (DZ Suffix) and
44/50-Lead Surface-Mount Thin
Small-Outline Package ( TSOP) (DGE Suffix)
D Ambient Temperature Range
0°C to 70°C
TMS418169A, TMS428169A
1048576 BY 16-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS892C – AUGUST 1996 – REVISED SEPTEMBER 1997
DZ PACKAGE
( TOP VIEW )
DGE PACKAGE
( TOP VIEW )
V_CC 1
DQ0 2
DQ1 3
DQ2 4
DQ3 5
V_CC 6
DQ4 7
DQ5 8
DQ6 9
DQ7 10
NC 11
NC 12
W 13
RAS 14
NC 15
NC 16
A0 17
A1 18
A2 19
A3 20
V_CC 21
42 V_SS
41 DQ15
40 DQ14
39 DQ13
38 DQ12
37 V_SS
36 DQ11
35 DQ10
34 DQ9
33 DQ8
32 NC
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 V_SS
V_CC 1
DQ0 2
DQ1 3
DQ2 4
DQ3 5
V_CC 6
DQ4 7
DQ5 8
DQ6 9
DQ7 10
NC 11
50 V_SS
49 DQ15
48 DQ14
47 DQ13
46 DQ12
45 V_SS
44 DQ11
43 DQ10
42 DQ9
41 DQ8
40 NC
NC 15
NC 16
W 17
RAS 18
NC 19
NC 20
A0 21
A1 22
A2 23
A3 24
V_CC 25
36 NC
35 LCAS
34 UCAS
33 OE
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
26 V_SS
description
PIN NOMENCLATURE
The TMS418169A and TMS428169A are
16 777 216-bit dynamic random-access memory
(DRAM) devices organized as 1 048 576 words of
A[0:9]
DQ[0:15]
LCAS
UCAS
Address Inputs
Data In / Data Out
Lower Column-Address Strobe
Upper Column-Address Strobe
16 bits each. They employ state-of-the-art
NC
No Internal Connection
technology for high performance, reliability, and
low power at low cost.
The TMS418169A features maximum RAS
access times of 50-, 60-, and 70 ns, and the
OE
RAS
VCC
VSS
W
Output Enable
Row-Address Strobe
5-V or 3.3-V Supply
Ground
Write Enable
TMS428169A features maximum RAS access
times of 60- and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out
is unlatched to allow greater system flexibility.
The TMS418169A is offered in a 42-lead plastic surface-mount SOJ package (DZ suffix). The TMS428169A
is offered in a 44/50-lead plastic surface-mount TSOP (DGE suffix). These packages are designed for operation
from 0°C to 70°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
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