TMS28F1600T Datasheet, PDF (1/44 Pages) Texas Instruments – 16M-BIT (1M BY 16, 2M BY 8) CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY

TMS28F1600T, TMS28F1600B
16M-BIT (1M BY 16, 2M BY 8)
CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY
SMJS836 – JANUARY 1997
D Auto-Select V_CC and V_PP Voltages
– 2.7 V, 3.3 V, or 5 V Read Operation (V_CC)
– 2.7 V, 3.3 V, 5 V, or 12 V Program Erase
(V_PP)
D Fast Read Access Time
– 5 V:
80/90 ns MAX
– 2.7 V, 3.3 V: 90/100 ns MAX
D Low Power Consumption (V_CC = 5.5V)
– Active Write 220 mW (Byte Mode)^†
– Active Read 248 mW (Byte Mode)^†
– Active Write 220 mW (Word Mode)^†
– Active Read 248 mW (Word Mode)^†
– Block-Erase 220 mW^†
– Standby
0.55 mW
– Deep Power-Down Mode 0.044 mW
D Automatic Power-Saving Mode
D Sector Architecture
– One 16K-Byte Protected Boot Block
– Two 8K-Byte Parameter Blocks
– One 96K-Byte Main Block
– Fifteen 128K-Byte Main Blocks
– Top or Bottom Boot Locations
D User-Selectable x8 or x16 Operation
D Fully Automated On-Chip Erase and
Byte/Word Program Operations
D All Inputs/Outputs TTL-Compatible
D Supports Concurrent Operations
– Read During Program
– Read During Erase
– Program During Erase
– Two-Byte / -Word Programming
– Two Sector Combinations Erasure
D Enhanced Suspend Options
– Sector-Erase-Suspend to Read
– Sector-Erase-Suspend to Program
– Program-Suspend to Read
D Command Set Compatible With Previous
Generation of Flash
D Transition Between Single-Operation and
Concurrent-Operations Mode by way of
Software Command
D 100000 Program / Erase Cycles Per Sector
D Hardware Write-Protection for Boot Block
D Two Temperature Ranges
– Commercial 0°C to 70° C
– Extended
– 40°C to 85° C
D Industry Standard Packaging (JEDEC)
– 48-Pin TSOP (DCD Suffix)
A0 – A19
BYTE
DQ0 – DQ14
DQ15/A–1
CE
OE
NC
RP
VCC
VPP
VSS
WE
WP
PIN NOMENCLATURE
Address Inputs
Byte Enable
Data In / Data out
Data In/Out (word-wide mode)
Low Order Address (byte-wide mode)
Chip Enable
Output Enable
No Internal Connection
Reset / Deep Power Down
Power Supply
Power Supply for Program / Erase
Ground
Write Enable
Write Protect
description
The TMS28F1600T / B is a 16777216-bit, boot-block flash memory that can be electrically block-erased and
reprogrammed. The TMS28F1600T/B is organized in a sectored architecture consisting of one 16K-byte
protected boot sector, two 8K-byte parameter sectors, one 96K-byte main sector, and fifteen 128K-byte main
sectors. Operation as a 2M-byte (8-bit) or a 1M-word (16-bit) organization is user-selectable.
Embedded program and block-erase functions are fully automated by two on-chip write state machines
(WSMs), simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM
statuses can be monitored by two on-chip status registers, one for each WSM, to determine progress of
program/erase tasks.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
† _{In single-operation mode}
PRODUCT PREVIEW information concerns products in the formative or
design phase of development. Characteristic data and other
specifications are design goals. Texas Instruments reserves the right to
change or discontinue these products without notice.
Copyright © 1997, Texas Instruments Incorporated
• POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
1