TM4100GAD8 Datasheet, PDF (1/7 Pages) Texas Instruments – 4194304 BY 8-BIT DRAM MODULE

TM4100GAD8
4194304 BY 8-BIT DRAM MODULE
D Organization . . . 4 194304 × 8
D Single 5-V Power Supply (±10% Tolerance)
D 30-Pin Single In-Line Memory Module
(SIMM) for Use With Sockets
D Utilizes Eight 4-Megabit DRAMs in Plastic
Small-Outline J-Lead Packages (SOJs)
D Long Refresh Period
16 ms (1024 Cycles)
D All Inputs, Outputs, Clocks Fully TTL
Compatible
D 3-State Output
D Performance Ranges:
ACCESS ACCESS ACCESS READ
TIME
TIME TIME
OR
tRAC
tAA tCAC WRITE
CYCLE
(MAX) (MAX) (MAX) (MIN)
’4100GAD8-60 60 ns
30 ns 15 ns 110 ns
’4100GAD8-70 70 ns
35 ns 18 ns 130 ns
’4100GAD8-80 80 ns
40 ns 20 ns 150 ns
D Common CAS Control for Eight Common
Data-In and Data-Out Lines
D Low Power Dissipation
D Operating Free-Air Temperature Range
0°C to 70°C
description
description
The TM4100GAD8 is a dynamic random-access
memory (DRAM) module organized as 4 194 304
× 8 bits in a 30-pin leadless single in-line memory
module (SIMM).
The SIMM is composed of eight TMS44100DJ
4 194 304 × 1-bit DRAMs in 20/26-lead plastic
small-outline J-lead packages (SOJ) mounted on
a substrate with decoupling capacitors.
The TM4100GAD8 is available in the AD
single-sided, leadless module for use with
sockets.
The TM4100GAD8 is characterized for operation
from 0°C to 70°C.
SMMS508C – MARCH 1992 – REVISED JUNE 1995
SINGLE IN-LINE MODULE
( TOP VIEW )
VCC ₁
CAS 2
DQ1 3
A0 4
A1 5
DQ2 6
A2 7
A3 8
VSS 9
DQ3 10
A4 11
A5 12
DQ4 13
A6 14
A7 15
DQ5 16
A8 17
A9 18
A10 19
DQ6 20
W 21
VSS 22
DQ7 23
NC 24
DQ8 25
NC 26
RAS 27
NC 28
NC 29
VCC 30
PIN NOMENCLATURE
A0 – A10
CAS
DQ1 – DQ8
NC
RAS
VCC
VSS
W
Address Inputs
Column-Address Strobe
Data In / Data Out
No Internal Connection
Row-Address Strobe
5-V Supply
Ground
Write Enable
operation
The TM4100GAD8 operates as eight TMS44100DJs connected as shown in the functional block diagram. Refer
to the TMS44100 data sheet for details of its operation. The common I/O feature of the TM4100GAD8 dictates
the use of early-write cycles to prevent contention on D and Q.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1995, Texas Instruments Incorporated
• POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
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