TM124MBK36B Datasheet, PDF (1/11 Pages) Texas Instruments – DYNAMIC RAM MODULE

TM124MBK36B, TM124MBK36R 1048576 BY 36-BIT
TM248NBK36B, TM248NBK36R 2097152 BY 36-BIT
DYNAMIC RAM MODULE
SMMS137E – JANUARY 1991 – REVISEDJUNE 1995
D Organization
TM124MBK36B . . . 1 048 576 × 36
TM248NBK36B . . . 2 097 152 × 36
D Single 5-V Power Supply (±10% Tolerance)
D 72-pin Leadless Single In-Line Memory
Module (SIMM) for Use With Sockets
D TM124MBK36B–Utilizes Eight 4-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages and One 4-Megabit
Quad-CAS DRAM in a Plastic Small-Outline
J-Lead (SOJ) Package
D TM248NBK36B–Utilizes Sixteen 4-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages and Two 4-Megabit
Quad-CAS DRAMs in Plastic Small-Outline
J-Lead (SOJ) Packages
D Long Refresh Period
16 ms (1024 Cycles)
D All Inputs, Outputs, Clocks Fully TTL
Compatible
D 3-State Output
D Common CAS Control for Nine Common
Data-In and Data-Out Lines, in Four Blocks
D Enhanced Page Mode Operation with
CAS-Before-RAS ( CBR), RAS-Only, and
Hidden Refresh
D Presence Detect
D Performance Ranges:
ACCESS ACCESS ACCESS READ
TIME
TIME TIME OR
tRAC
tAA
tCAC WRITE
CYCLE
(MAX)
(MAX) (MAX) (MIN)
’124MBK36B-60 60 ns
30 ns 15 ns 110 ns
’124MBK36B-70 70 ns
35 ns 18 ns 130 ns
’124MBK36B-80 80 ns
40 ns 20 ns 150 ns
’248NBK36B-60 60 ns
30 ns 15 ns 110 ns
’248NBK36B-70 70 ns
35 ns 18 ns 130 ns
’248NBK36B-80 80 ns
40 ns
D Low Power Dissipation
20 ns 150 ns
D Operating Free-Air Temperature Range
0°C to 70°C
D Gold-Tabbed Versions Available:^†
– TM124MBK36B
– TM248NBK36B
D Tin-Lead (Solder) Tabbed Versions
Available:
– TM124MBK36R
– TM248NBK36R
description
TM124MBK36B
The TM124MBK36B is a dynamic random-access memory (DRAM) organized as four times 1 048 576 × 9
(bit 9 is generally used for parity) in a 72-pin leadless single in-line memory module (SIMM). The SIMM is
composed of eight TMS44400DJ, 1 048 576 × 4-bit DRAMs, each in 20/26-lead plastic small-outline J-lead
packages (SOJs), and one TMS44460DJ, 1 048 576 × 4-bit Quad-CAS DRAM in a 24/26-lead plastic
small-outline J-lead package (SOJ), mounted on a substrate with decoupling capacitors. Each TMS44400DJ
and TMS44460DJ is described in the TMS44400 or TMS44460 data sheet, respectively.
The TM124MBK36B is available in the single-sided BK leadless module for use with sockets.
The TM124MBK36B features RAS access times of 60 ns, 70 ns, and 80 ns. This device is rated for operation
from 0°C to 70°C.
TM248NBK36B
The TM248NBK36B is a DRAM organized as four times 2 097 152 × 9 (bit 9 is generally used for parity) in a
72-pin leadless SIMM. The SIMM is composed of sixteen TMS44400DJ, 1 048 576 × 4-bit DRAMs, each in
20/26-lead plastic small-outline J-lead packages (SOJs), and two TMS44460DJ, 1 048 576 × 4-bit Quad-CAS
DRAMs, each in a 24/26-lead plastic small-outline J-lead package (SOJ), mounted on a substrate with
decoupling capacitors. Each TMS44400DJ and TMS44460DJ is described in the TMS44400 and TMS44460
data sheet, respectively.
† _{Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.}
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1995, Texas Instruments Incorporated
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