TIL193 Datasheet, PDF (1/6 Pages) Texas Instruments – Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel

TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
D Gallium-Arsenide-Diode Infrared Source
D Source Is Optically Coupled to Silicon npn
Phototransistor
D Choice of One, Two, or Four Channels
D Choice of Three Current-Transfer Ratios
D High-Voltage Electrical Isolation 3.535 kV
Peak (2.5 kV rms)
D Plastic Dual-In-Line Packages
D UL Listed — File #E65085
description
These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per
channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,
and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are
tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and
100% minimum are designated with the suffix A and B respectively.
schematic diagrams
1
ANODE
TIL191
2
CATHODE
4 _COLLECTOR
3 _EMITTER
1
1ANODE
2
1CATHODE
3
2ANODE
TIL193
16 _1COLLECTOR
15 _1EMITTER
14 _2COLLECTOR
1
1ANODE
1CATHODE ²
3
2ANODE
4
2CATHODE
TIL192
8 _1COLLECTOR
7 _1EMITTER
6 _2COLLECTOR
5
2EMITTER
4
2CATHODE
5
3ANODE
3CATHODE ⁶
7
4ANODE
8
4CATHODE
13
2EMITTER
12 _3COLLECTOR
11 _3EMITTER
10 _3COLLECTOR
9
3EMITTER
absolute maximum ratings at 25°C free-air (unless otherwise noted)^†
Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 3.535 kV peak or dc (± 2.5 kV rms)
Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V
Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3) . . . . . . . 50 mA
Continuous total power dissipation at (or below) 25°C free-air temperature:
Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
Storage temperature range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† _{Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and}
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. This rating applies for sine-wave operation at 50 Hz or 60 Hz. This capability is verified by testing in accordance with UL requirements.
2. This value applies when the base-emitter diode is open circuited.
3. Derate linearly to 100°C free-air temperature at the rate of 0.67 mA/°C.
4. Derate linearly to 100°C free-air temperature at the rate of 2 mW/°C.
5. Derate linearly to 100°C free-air temperature at the rate of 2.67 mW/°C.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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