TC281 Datasheet, PDF (1/18 Pages) Texas Instruments – 1036- × 1010-pixel ccd image sensor

TC281
1036- × 1010-PIXEL CCD IMAGE SENSOR
D High-Resolution, Solid-State
Frame-Transfer Image Sensor
D 11.3-mm Image Area Diagonal
D 1000 (H) x 1000 (V) Active Elements
D Up to 30 Frames per Second
D 8-µm Square Pixels
D Low Dark Current
D Advanced Lateral-Overflow-Drain
Antiblooming
D Single Pulse Image Area Clear Capability
D Dynamic Range . . . More than 60 dB
D High Sensitivity and Quantum Efficiency
D Nondestructive Charge Detection Through
Texas Instruments (TI™) Advanced BCD
Node Technology
D High Near-IR and Blue Response
D Solid-State Reliability With No Image
Burn-In, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
SOCS058B – JUNE 1996 – REVISED MAY 1999
SUB 1
ODB 2
IAG 3
SUB 4
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SAG 5
SAG 6
SUB 7
OUT 8
ADB 9
ÎÎÎÎÎ
CDB 10
VGATE 11
22 SUB
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21 TDB
20 IAG
19 SUB
ÎÎÎÎÎ
18 SUB
17 SUB
16 NC
15 SRG
14 TRG
13 VSOURCE
12 RST
description
The TC281 is a frame-transfer charge-coupled-device (CCD) image sensor that provides a very high-resolution
image acquisition capability for image-processing applications such as robotic vision, medical X-ray analysis,
and metrology. The image sensing area measures 8 mm horizontally and 8 mm vertically; the image-area
diagonal measures 11,3 mm and the sensor has 8-µm square pixels. The image area contains 1000 active lines
with 1000 active pixels per line. The dark reference signal can be obtained from ten dark reference lines located
between the image area and the storage area, 28 dark reference pixels located at the left edge of each horizontal
line, and 8 dark reference pixels located at the right edge of each horizontal line.
The storage section of the TC281 contains 1010 lines with 1036 pixels per line. The area is protected from
exposure to light by a metal layer. Photoelectric charge that is generated in the image area of the sensor can
be transferred into the storage section in less than 110 µs. After the image capture is completed (integration
time), the image readout is accomplished by transferring charge, one line at a time, into the serial register
located below the storage area. The serial register contains 1036 active pixels and 9 dummy pixels. The
maximum serial-register data rate is 40 megapixels per second. If the storage area needs to be cleared of all
charge, charge may be quickly transferred across the serial registers into the clearing drain located below the
register.
A high performance bulk charge detection (BCD) structure converts charge from each pixel into an output
voltage. A low-noise, two-stage, source-follower amplifier further buffers the signal before it is sent to the output
pin. A readout rate of 30 frames per second is easily achievable with this device.
The blooming-protection of the sensor is based on an advanced lateral-overflow-drain structure (ALOD). The
antiblooming function is activated when a suitable dc bias is applied to the overflow-drain pin. With this type of
blooming protection it is also possible to clear the image area of charge completely. This is accomplished by
providing a single 10V pulse of at least 1 µs duration to the overflow-drain pin.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
TI is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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Copyright © 1999, Texas Instruments Incorporated
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