TC244A Datasheet, PDF (1/19 Pages) Texas Instruments – 786- × 488-PIXEL CCD IMAGE SENSOR

TC244A
786- × 488-PIXEL CCD IMAGE SENSOR
• High-Resolution, Solid-State Image Sensor
for NTSC Color TV Applications
• 8-mm Image-Area Diagonal, Compatible
With 1/2” Vidicon Optics
• 755 (H) x 242 (V) Active Elements in
Image-Sensing Area
• Advanced On-Chip Signal Processing
• Low Dark Current
• Electron-Hole Recombination Antiblooming
• Dynamic Range . . . More Than 70 dB
• High Sensitivity
• High Photoresponse Uniformity
• High Blue Response
• Single-Phase Clocking
• Separate Outputs for Each Color (RGB)
• Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
SUB 1
IAG 2
ABG 3
ADB 4
OUT3 (B) 5
OUT2 (G) 6
OUT1 (R) 7
AMP GND 8
CDB 9
SUB 10
SOCS056 – JUNE 1996
DUAL-IN-LINE PACKAGE
(TOP VIEW)
20 SUB
19 IAG
18 ABG
17 SAG
16 SRG3
15 SRG2
14 SRG1
13 NC
12 TRG
11 IDB
NC – No internal connection
description
The TC244A is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip
color NTSC TV applications. The device is intended to replace the 1/2-inch vidicon tube in applications requiring
small size, high reliability, and low cost.
The image-sensing area of the TC244A is configured into 242 lines with 786 elements in each line. Twenty-nine
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element.
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements
by one-half of a vertical line during the charge integration period in alternate fields, effectively increasing the
vertical resolution and minimizing aliasing. The single-chip color-sensing capability of the TC244A is achieved
by processing on striped-color filter with RGB organization. The stripes are precisely aligned to the sensing
elements, and the signal-charge columns are multiplexed during the readout into three separate registers with
three separate outputs corresponding to each individual color.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1996, Texas Instruments Incorporated
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