TC237B Datasheet, PDF (1/15 Pages) Texas Instruments – 680-×500-PIXEL CCD IMAGE SENSOR

TC237B
680- × 500-PIXEL CCD IMAGE SENSOR
D High Resolution, 1/3-in Solid-State Image
Sensor for NTSC Black and White
Applications
D 340,000 Pixels per Field
D Frame Memory
D 658 (H) × 496 (V) Active Elements in Image
Sensing Area Compatible With Electronic
Centering
D Multimode Readout Capability
– Progressive Scan
– Interlaced Scan
– Dual-Line Readout
– Image Area Line Summing
– Smear Subtraction
D Fast Single-Pulse Clear Capability
D Continuous Electronic Exposure Control
From 1/60 – 1/50,000 s
D 7.4-µm Square Pixels
D Advanced Lateral Overflow Drain
Antiblooming
D Low Dark Current
SOCS063 – APRIL 2001
DUAL-IN-LINE PACKAGE
(TOP VIEW)
ODB 1
IAG2 2
SUB 3
ADB 4
OUT1 5
OUT2 6
12 IAG1
11 SAG
10 SAG
9 SUB
8 SRG
7 RST
D High Photoresponse Uniformity
D High Dynamic Range
D High Sensitivity
D High Blue Response
D Solid-State Reliability With No Image
Burn-In, Residual Imaging, Image
Distortion, Image Lag, or
Microphonics
description
The TC237B is a frame-transfer, charge-coupled device (CCD) image sensor designed for use in single-chip
black and white National Television Standards Committee (NTSC) TV, computer, and special-purpose
applications that require low cost and small size.
The image-sensing area of the TC237B device is configured into 500 lines with 680 elements in each line.
Twenty-two elements are provided in each line for dark reference. The antiblooming feature of the sensor is
based on an advanced lateral overflow drain concept. The sensor can be operated in a true interlace mode as
a 658(H) × 496(V) sensor with a low dark current. An important feature of the TC237B high-resolution sensor
is the ability to capture a full 340,000 pixels per field. The image sensor also provides high-speed image transfer
capability and a continuous electronic exposure control without the loss of sensitivity and resolution inherent
in other technologies. Charge voltage is converted to signal voltage at 13 µV per electron by a high-performance
structure with a reset and a voltage-reference generator. The signal is further buffered by a low-noise,
two-stage, source-follower amplifier to provide high-output drive capability.
The TC237B sensor is built using TI-proprietary advanced virtual-phase (AVP) technology, which provides
devices with high blue response, low dark current, high photoresponse uniformity, and single-phase clocking.
The TC237B sensor is characterized for operation from – 10°C to 45°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
TI is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright  2001, Texas Instruments Incorporated
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