TC236P Datasheet, PDF (1/17 Pages) Texas Instruments – 680-×500-PIXEL CCD IMAGE SENSOR

TC236P
680- × 500-PIXEL CCD IMAGE SENSOR
• Very High-Resolution, 1/3-in Solid-State
Image Sensor for NTSC Color Applications
• 340,000 Pixels per Field
• Frame Memory
• 658 (H) × 496 (V) Active Elements in
Image-Sensing Area Compatible With
Electronic Centering
• Multimode Readout Capability
– Progressive Scan
– Interlaced Scan
– Dual Line
• Fast Single-Pulse Clear Capability
• Continuous Electronic-Exposure Control
From 1/60 – 1/50,000 s
• 7.4-µm Square Pixels
• Advanced Lateral-Overflow-Drain
Antiblooming
• Low Dark Current
• Dynamic Range . . . 69 dB Typ With
Correlated Double Sampling (CDS)
SOCS055A – JUNE 1996 – REVISED APRIL 1997
DUAL-IN-LINE PACKAGE
(TOP VIEW)
ODB 1
IAG2 2
SUB 3
ADB 4
OUT1 5
OUT2 6
12 IAG1
11 SAG
10 SAG
9 SUB
8 SRG
7 RST
• High Sensitivity
• High Blue Response
• Solid-State Reliability With No Image
Burn-In, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
• High Photoresponse Uniformity
description
The TC236P is a frame-transfer, charge-coupled device (CCD) image sensor designed for use in single-chip
color NTSC TV, computer, and special-purpose applications requiring low cost and small size.
The image-sensing area of the TC236P is configured into 500 lines with 680 elements in each line. Twenty-two
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on an advanced lateral-overflow-drain concept. The sensor can be operated in a true-interlace mode as a
658(H) × 496(V) sensor with a low dark current. One important feature of the TC236P very high-resolution
sensor is the ability to capture a full 340,000 pixels per field. The image sensor also provides high-speed image-
transfer capability. This capability allows for a continuous electronic-exposure control without the loss of
sensitivity and resolution inherent in other technologies. The charge is converted to signal voltage at 13 µV per
electron by a high-performance structure with a reset and a voltage-reference generator. The signal is further
buffered by a low-noise, two-stage, source-follower amplifier to provide high output-drive capability.
The TC236P is built using TI-proprietary advanced virtual-phase (AVP) technology, which provides devices with
high blue response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC236P
is characterized for operation from – 10°C to 45°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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Copyright © 1996, Texas Instruments Incorporated
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