SN65220_06 Datasheet, PDF (1/10 Pages) Texas Instruments – USB PORT TRANSIENT SUPPRESSORS

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YZB-4 DBV-6
PW-8
P-8
SN65220
SN65240
SN75240
SLLS266F − FEBRUARY 1997 − REVISED JULY 2004
USB PORT TRANSIENT SUPPRESSORS
FEATURES
D Design to Protect Submicron 3-V or 5-V
Circuits from Noise Transients
D Port ESD Protection Capability Exceeds:
− 15-kV Human Body Model
− 2-kV Machine Model
D Available in a WCSP Chip-Scale Package
D Stand-Off Voltage . . . 6 V Min
D Low Current Leakage . . . 1 µA Max at 6 V
D Low Capacitance . . . 35 pF Typical
DESCRIPTION
The SN65220 is a single transient voltage suppressor and
the SN65240 and SN75240 are dual transient voltage
suppressors designed to provide electrical noise transient
protection to Universal Serial Bus (USB) 1.1 ports. Note
that the input capacitance of the device makes it
unsuitable for high-speed USB 2.0 applications.
Any cabled I/O can be subjected to electrical noise
transients from various sources. These noise transients
can cause damage to the USB transceiver and/or the USB
ASIC if they are of sufficient magnitude and duration.
USB ports are typically implemented in 3-V or 5-V digital
CMOS with very limited ESD protection. The SN65220,
SN65240, and SN75240 can significantly increase the
port ESD protection level and reduce the risk of damage
to the circuits of the USB port.
The IEC1000-4-2 ESD performance of the SN65220,
SN65240, and SN75240 is measured at the system level.
Therefore, system design impacts the results of these
tests. A high compliance level may be attained with proper
board design and layout.
EQUIVALENT SCHEMATIC DIAGRAM
A or C
GND
B or D
(One Suppressor Shown)
NOTE: All GND terminals should be connected to ground.
APPLICATIONS
D USB 1.1 Host, Hub, or Peripheral Ports
SN65220DBV
(TOP VIEW)†
NC 1 6 A
SN65220YZB
(Size: 925 mm x 925 mm +6 mm)
(TOP VIEW)
GND 2 5 _GND
NC 3 4 B
A A1 A2 GND
B B1 B2 GND
NC − No internal connection
†_{When read horizontally, Pin 1 is the bottom left pin.}
GND
C
GND
D
SN65240P, SN65240PW
SN75240P, SN75240PW
(TOP VIEW)
1
8
A
2
7
GND
3
6
B
4
5
GND
CURRENT vs VOLTAGE
7.5
5
2.5
0
−2.5
−5
−7.5
−10
−10
−5
0
5
10
15
Voltage − V
NOTE A: Typical current versus voltage curve was derived
using the IEC 1.2/50-µs surge waveform.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products
conform to specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all parameters.
Copyright  1997 − 2003, Texas Instruments Incorporated