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LM4125_15 Datasheet, PDF (1/18 Pages) Texas Instruments – Precision Micropower Low Dropout Voltage Reference
LM4125
www.ti.com
SNVS238A – MAY 2004 – REVISED APRIL 2013
LM4125 Precision Micropower Low Dropout Voltage Reference
Check for Samples: LM4125
FEATURES
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•2 Small SOT23-5 Package
• Low Dropout Voltage: 120 mV Typ @ 1 mA
• High Output Voltage Accuracy: 0.2%
• Source and Sink Current Output: ±5 mA
• Supply Current: 160 μA Typ.
• Low Temperature Coefficient: 50 ppm/°C
• Fixed Output Voltages: 2.048, 2.5,and 4.096
• Industrial Temperature Range: −40°C to +85°C
• (For Extended Temperature Range, −40°C to
125°C, Contact TI)
APPLICATIONS
• Portable, Battery Powered Equipment
• Instrumentation and Process Control
• Automotive & Industrial
• Test Equipment
• Data Acquisition Systems
• Precision Regulators
• Battery Chargers
• Base Stations
• Communications
• Medical Equipment
DESCRIPTION
The LM4125 is a precision low power low dropout
bandgap voltage reference with up to 5 mA output
current source and sink capability.
This series reference operates with input voltages as
low as 2V and up to 6V consuming 160 µA (Typ.)
supply current. In power down mode, device current
drops to less than 2 μA.
The LM4125 comes in two grades (A and Standard)
and three voltage options for greater flexibility. The
best grade devices (A) have an initial accuracy of
0.2%, while the standard have an initial accuracy of
0.5%, both with a tempco of 50ppm/°C ensured from
−40°C to +125°C.
The very low dropout voltage, low supply current and
power-down capability of the LM4125 makes this
product an ideal choice for battery powered and
portable applications.
The device performance is ensured over the industrial
temperature range (−40°C to +85°C), while certain
specs are ensured over the extended temperature
range (−40°C to +125°C). Please contact TI for full
specifications over the extended temperature range.
The LM4125 is available in a standard 5-pin SOT-23
package.
Connection Diagram
Figure 1. 5-Pin SOT-23 Surface Mount Package
See Package Number DBV
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2013, Texas Instruments Incorporated