ISO5851 Datasheet, PDF (1/34 Pages) Texas Instruments – High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

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ISO5851
SLLSEN5A – JUNE 2015 – REVISED JUNE 2015
ISO5851 High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver
with Active Safety Features
1 Features
•1 2.5-A Peak Source and 5-A Peak Sink Currents
• Short Propagation Delay: 76 ns (Typ), 110 ns
(Max)
• 2-A Active Miller Clamp
• Output Short-Circuit Clamp
• Fault Alarm upon Desaturation Detection is
Signaled on FLT and Reset Through RST
• Input and Output Under Voltage Lock-Out (UVLO)
with Ready (RDY) Pin Indication
• Active Output Pull-down and Default Low Outputs
with Low Supply or Floating Inputs
• 3-V to 5.5-V Input Supply Voltage
• 15-V to 30-V Output Driver Supply Voltage
• CMOS Compatible Inputs
• Rejects Input Pulses and Noise Transients
Shorter Than 20 ns
• 100-kV/μs Minimum Common-Mode Transient
Immunity (CMTI) at V_CM = 1500 V
• Operating Temperature: –40°C to 125°C Ambient
• Safety and Regulatory Approvals:
– 8000-V_PK V_IOTM and 2121-V_PK V_IORM
Reinforced Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– 5700-V_RMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950-1, IEC 60601-1 and IEC 61010-1 End
Equipment Standards
– CQC Certification per GB4943.1-2011
– All Certifications are Planned
2 Applications
• Isolated IGBT and MOSFET Drives in
– Industrial Motor Control Drives
– Industrial Power Supplies
– Solar Inverters
– HEV and EV Power Modules
– Induction Heating
3 Description
The ISO5851 is a 5.7-kV_RMS, reinforced isolated gate
driver for IGBTs and MOSFETs with 2.5-A source
and 5-A sink current. The input side operates from a
single 3-V to 5.5-V supply. The output side allows for
a supply range from minimum 15-V to maximum
30-V. Two complementary CMOS inputs control the
output state of the gate driver. The short propagation
time of 76 ns assures accurate control of the output
stage.
An internal desaturation (DESAT) fault detection
recognizes when the IGBT is in an overload
condition. Upon a DESAT detect the gate driver
output is driven low to V_EE2 potential turning the IGBT
immediately off.
When desaturation is active, a fault signal is sent
across the isolation barrier pulling the FLT output at
the input side low and blocking the isolator input. The
FLT output condition is latched and can be reset
through a low-active pulse at the RST input.
When the IGBT is turned off during normal operation
with bipolar output supply, the output is hard clamp to
V_EE2. If the output supply is unipolar, an active Miller
clamp can be used, allowing Miller current to sink
across a low impedance path preventing IGBT to be
dynamically turned on during high voltage transient
conditions.
Device Information⁽¹⁾
PART NUMBER PACKAGE
BODY SIZE (NOM)
ISO5851
SOIC (16)
10.30 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Functional Block Diagram
OUT
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.