EMB1412_15 Datasheet, PDF (1/15 Pages) Texas Instruments – MOSFET Gate Driver

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EMB1412
SNOSB66B – AUGUST 2011 – REVISED NOVEMBER 2014
EMB1412 MOSFET Gate Driver
1 Features
•1 Compound CMOS and Bipolar Outputs Reduce
Output Current Variation
• 7 A Sink/3 A Source Current
• Fast Propagation Times (25 ns Typical)
• Fast Rise and Fall Times (14 ns/12 ns Rise/Fall
with 2 nF Load)
• Inverting and Non-Inverting Inputs Provide Either
Configuration with a Single Device
• Supply Rail Under-Voltage Lockout Protection
• Dedicated Input Ground (IN_REF) for Split Supply
or Single Supply Operation
• Thermally Enhanced 8-Pin VSSOP Package
• Output Swings from V_CC to V_EE Which can be
Negative Relative to Input Ground
2 Applications
• Li-Ion Battery Management Systems
• Hybrid and Electric Vehicles
• Grid Storage
• 48 V Systems Supply
• UPS
3 Description
The EMB1412 MOSFET gate driver provides high
peak gate drive current in 8-lead exposed-pad
VSSOP package, with improved power dissipation
required for high frequency operation. The compound
output driver stage includes MOS and bipolar
transistors operating in parallel that together sink
more than 7-A peak from capacitive loads. Combining
the unique characteristics of MOS and bipolar
devices reduces drive current variation with voltage
and temperature. Under-voltage lockout protection is
provided to prevent damage to the MOSFET due to
insufficient gate turn-on voltage. The EMB1412
provides both inverting and non-inverting inputs to
satisfy requirements for inverting and non-inverting
gate drive with a single device type.
Device Information⁽¹⁾
PART NUMBER
PACKAGE
BODY SIZE (NOM)
EMB1412
HVSSOP (8)
3.00 mm x 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.