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CSD95375Q4M Datasheet, PDF (1/18 Pages) Texas Instruments – Synchronous Buck NexFET™ Power Stage
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Synchronous Buck NexFET™ Power Stage
CSD95375Q4M
SLPS430 – JUNE 2013
FEATURES
1
•23 93% System Efficiency at 15A
• Max Rated Continuous Current 25A, Peak 60A
• High Frequency Operation (up to 2 MHz)
• High Density - SON 3.5x4.5-mm Footprint
• Ultra Low Inductance Package
• System Optimized PCB Footprint
• Ultra Low Quiescent (ULQ) Current Mode
• 3.3V and 5V PWM Signal Compatible
• Diode Emulation Mode with FCCM
• Input Voltages up to 14.5V
• Three-State PWM Input
• Integrated Bootsrap Diode
• Shoot Through Protection
• RoHS Compliant – Lead Free Terminal Plating
• Halogen Free
APPLICATIONS
• Ultrabook/Notebook DC/DC Converters
• Multiphase Vcore and DDR Solutions
• Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
ORDERING INFORMATION
Device
Package
Media Qty
CSD95375Q4M
SON 3.5 × 4.5-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
DESCRIPTION
The CSD95375Q4M NexFET™ Power Stage is a highly optimized design for use in a high power, high density
Synchronous Buck converter. This product integrates the driver IC and NexFET technology to complete the
power stage switching function. The driver IC has a built-in selectable diode emulation function that enables
DCM operation to improve light load efficiency. In addition, the driver IC supports ULQ mode that enables
Connected Standby for Windows™ 8 . With the PWM input in tri-state, quiescent current is reduced to 130 µA,
with immediate response. When SKIP# is held at tri-state, the current is reduced to 8 µA (typically 20 µs is
required to resume switching). This combination produces a high current, high efficiency, and high speed
switching device in a small 3.5 × 4.5-mm outline package. In addition, the PCB footprint has been optimized to
help reduce design time and simplify the completion of the overall system design.
CSD95375
VCC
VIN
VOUT
VOUT
VCC
PWM1
+Is1
VOUT
-Is2
+NTC
SS
-NTC
RT
+Is2
-Is2
PWM2
PGND
Multi-Phase
Controller
CSD95375
Figure 1. Application Diagram
100
90
80
70
60
50
40
30
0
VDD = 5V
VIN = 12V
VOUT = 1.8V
LOUT = .29µH
fSW = 500kHz
TA = 25ºC
5
10
15
20
Output Current (A)
7
6
5
4
3
2
1
0
25
G001
Figure 2. Efficiency and Power Loss
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
All other trademarks are the property of their respective owners.
3
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated