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CSD88539ND_15 Datasheet, PDF (1/14 Pages) Texas Instruments – CSD88539ND, Dual 60 V N-Channel NexFET Power MOSFETs
CSD88539ND
SLPS456 – FEBRUARY 2014
CSD88539ND, Dual 60 V N-Channel NexFET™ Power MOSFETs
1 Features
•1 Ultra-Low Qg and Qgd
• Avalanche Rated
• Pb Free
• RoHS Compliant
• Halogen Free
2 Applications
• Half Bridge for Motor Control
• Synchronous Buck Converter
3 Description
This dual SO-8, 60 V, 23 mΩ NexFET™ power
MOSFET is designed to serve as a half bridge in low-
current motor control applications.
Top View
1
S1
2
G1
3
S2
4
G2
8
D1
7
D1
6
D2
5
D2
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
60
7.2
1.1
VGS = 6 V
27
VGS = 10 V
23
3.0
UNIT
V
nC
nC
mΩ
mΩ
V
Device
CSD88539ND
CSD88539NDT
Ordering Information
Qty
Media
Package
2500
250
13-Inch Reel
7-Inch Reel
SO-8 Plastic
Package
Ship
Tape and
Reel
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
60
±20
15
UNIT
V
V
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
11.7
A
Continuous Drain Current(1)
6.3
IDM Pulsed Drain Current (2)
PD
Power Dissipation(1)
46
A
2.1
W
TJ, Operating Junction and Storage
TSTG Temperature Range
–55 to 150 °C
EAS
Avalanche Energy, single pulse
ID = 22 A, L = 0.1 mH, RG = 25 Ω
24
mJ
(1) Typical RθJA = 60°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB
(2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%
RDS(on) vs VGS
60
54
TC = 25°C,I D = 5A
TC = 125°C,I D = 5A
48
42
36
30
24
18
12
6
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
ID = 5A
VDS = 30V
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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