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CSD86311W1723 Datasheet, PDF (1/10 Pages) Texas Instruments – Dual N-Channel NexFET™ Power MOSFET
CSD86311W1723
www.ti.com
Dual N-Channel NexFET™ Power MOSFET
Check for Samples: CSD86311W1723
SLPS251 – MAY 2010
FEATURES
1
• Dual N-Ch MOSFETs
• Common Source Configuration
• Small Footprint 1.7 mm × 2.3 mm
• Ultra Low Qg and Qgd
• Pb Free
• RoHS Compliant
• Halogen Free
APPLICATIONS
• Battery Management
• Battery Protection
• DC-DC Converters
PRODUCT SUMMARY
VDS
Drain to Source Voltage
25
V
Qg
Gate Charge Total (4.5V)
3.1
nC
Qgd
Gate Charge Gate to Drain
0.33
nC
VGS = 2.5V
37 mΩ
RDS(on) Drain to Source On Resistance VGS = 4.5V
31 mΩ
VGS = 8V
29 mΩ
VGS(th) Threshold Voltage
1
V
Text Added for Spacing
ORDERING INFORMATION
Device
Package
Media
Qty
1.7-mm × 2.3-mm
CSD86311W1723 Wafer Level 7-inch reel
Package
3000
Ship
Tape and
Reel
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with thermal characteristics in an ultra low
profile. Low on resistance and gate charge coupled
with the small footprint and low profile make the
device ideal for battery operated space constrained
application in load management as well as DC-DC
converter applications
Top View
G1
D1
D1
D1
S
S
S
S
G2
D2
D2
D2
P0115-01
RDS(on) vs VGS
50
ID = 2A
45
TC = 125°C
40
35
30
TC = 25°C
25
20
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage - V
G006
Text Added for Spacing
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Continuous Drain Current (1) (2)(3)
ID
Pulsed Drain Current (1) (2)(3)
Continupus Gate Clamp Current (4)
IG
Pulsed Gate Clamp Current (4)
PD
Power Dissipation (1)
TJ, Operating Junction and Storage
TSTG Temperature Range
VALUE
25
+10 / -8
4.5
6
1.5
–55 to 150
(1) May be limited by Max source current
(2) Based on Min Cu footprint
(3) Per MOSFET
(4) Total for device
UNIT
V
V
A
A
W
°C
100
90
80
70
60
50
40
30
20
0
RD1D2(on) vs VGS
ID = 2A
TC = 125°C
TC = 25°C
1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage - V
G013
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated