CSD75211W1723_11 Datasheet, PDF (1/8 Pages) Texas Instruments – Dual P-Channel NexFET™ Power MOSFET

CSD75211W1723
www.ti.com
SLPS250A – MAY 2010 – REVISED AUGUST 2011
Dual P-Channel NexFET™ Power MOSFET
Check for Samples: CSD75211W1723
FEATURES
1
• Dual P-Ch MOSFETs
• Common Source Configuration
• Small Footprint 1.7 mm × 2.3 mm
• Ultra Low Q_g and Q_gd
• Pb Free
• RoHS Compliant
• Halogen Free
APPLICATIONS
• Battery Management
• Battery Protection
• DC-DC Converters
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with thermal characteristics in an ultra low
profile. Low on resistance and gate charge coupled
with the small footprint and low profile make the
device ideal for battery operated space constrained
application in load management as well as DC-DC
converter applications
Top View
G1
D1
D1
D1
S
S
S
S
80
70
60
50
40
30
20
10
0
0
G2
D2
D2
D2
P0114-01
R_DS(on) vs V_GS
I_D = -2A
T_C = 125°C
T_C = 25°C
1
2
3
4
5
6
7
-V_GS - Gate-to-Source Voltage - V
8
G006
PRODUCT SUMMARY
V_DS
Drain to Source Voltage
-20
V
Q_g
Gate Charge Total (-4.5V)
4.5
nC
Q_gd
Gate Charge Gate to Drain
0.9
nC
V_GS = -1.8V
50 mΩ
R_DS(on) Drain to Source On Resistance V_GS = -2.5V
39 mΩ
V_GS = -4.5V
32 mΩ
V_GS(th) Threshold Voltage
-0.7
V
Text Added for Spacing
ORDERING INFORMATION
Device
Package
Media
Qty
1.7-mm × 2.3-mm
CSD75211W1723 Wafer Level
Package
7-Inch
Reel
3000
Ship
Tape and
Reel
Text Added for Spacing
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
Continuous Drain Current ^{(1) (2)(3)}
I_D
Pulsed Drain Current ^{(1) (2)(3)}
Continupus Gate Clamp Current ⁽⁴⁾
I_G
Pulsed Gate Clamp Current ⁽⁴⁾
P_D
Power Dissipation ⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
VALUE
-20
±8
-4.5
-6
1.5
–55 to 150
(1) May be limited by Max source current
(2) Based on Min Cu footprint
(3) Per MOSFET
(4) Total for device
UNIT
V
V
A
A
W
°C
140
120
100
80
60
40
20
0
0
R_D1D2(on) vs V_GS
I_D = −2A
T_C = 125°C
T_C = 25°C
1
2
3
4
5
6
7
-V_GS - Gate-to-Source Voltage - V
8
G013
1
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Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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